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Carbon nanotube bundle field effect transistor array and manufacturing method thereof

A technology of field-effect transistors and carbon nanotube bundles, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problem that carbon nanotube field-effect transistors cannot be used in high-power devices, etc., to reduce production costs and process steps Simple, high operating voltage and effect of operating current

Active Publication Date: 2018-07-10
ZING SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a carbon nanotube bundle field effect transistor array and its manufacturing method, which is used to solve the problem that the carbon nanotube field effect transistor in the prior art cannot be applied to high-power devices. question

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  • Carbon nanotube bundle field effect transistor array and manufacturing method thereof
  • Carbon nanotube bundle field effect transistor array and manufacturing method thereof
  • Carbon nanotube bundle field effect transistor array and manufacturing method thereof

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Embodiment 1

[0058] The present invention provides a carbon nanotube bundle field effect transistor array, please refer to figure 1 , is shown as a structural schematic diagram of the carbon nanotube bundle field effect transistor array, including:

[0059] source material layer 103;

[0060] a drain material layer 109 formed above the source material layer 103;

[0061] The carbon nanotube bundle array is connected between the source material layer 103 and the drain material layer 109; the carbon nanotube bundle array includes several discrete carbon nanotube bundle units 105, wherein the carbon nanotube bundle unit The first axial end of 105 is connected to the source material layer 103, and the second axial end of the carbon nanotube bundle unit 105 is connected to the drain material layer 109;

[0062] A grid structure is formed between each carbon nanotube bundle unit 105 in the carbon nanotube bundle array, and the grid structure is isolated from the source material layer 103 by a ...

Embodiment 2

[0073] The present invention also provides a method for manufacturing a carbon nanotube bundle field effect transistor array, comprising the following steps:

[0074] See first figure 2 , performing step S1: providing a substrate 101, and sequentially forming a third insulating layer 102, a source material layer 103, and a first insulating layer 104 on the substrate 101.

[0075] Specifically, the base 101 includes, but is not limited to, conventional semiconductor substrate materials such as Si and Ge. The third insulating layer 102 is made of silicon oxide or other insulating materials for isolating the source material layer 103 from the base 101 . The source material layer 103 includes a metal material, such as any one of Ti, Ta, Hf, Ni, Ru, Ir, Au, Pt, Al, Co, W, Mo or any one of their alloys. The first insulating layer 104 is made of silicon oxide or other insulating materials.

[0076] The third insulating layer 102, the source material layer 103, and the first insul...

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Abstract

The invention provides a carbon nanotube bundle field effect transistor array and a manufacturing method thereof. The carbon nanotube bundle field effect transistor array comprises a source material layer, a drain material layer and a carbon nanotube bundle array connected between the source material layer and the drain material layer, wherein the carbon nanotube bundle array comprises a pluralityof discretely-arranged carbon nanotube bundle units; the axial first end of the carbon nanotube bundle unit is connected with the source material layer; the axial second end of the carbon nanotube bundle unit is connected with the drain material layer; and the carbon nanotube bundle units are surrounded by a gate structure. The carbon nanotube bundle field effect transistor array can withstand higher operation voltage and operation current and can be applied to a high-power device; by adopting a surrounding gate structure, the control ability of the gate to a channel can be improved; and thecarbon nanotube bundle field effect transistor array manufacturing method has the characteristic of simple process steps, and the production cost can be reduced.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and relates to a carbon nanotube bundle field effect transistor array and a manufacturing method thereof. Background technique [0002] For carrier transport media, vacuum is inherently superior to solids, as it allows ballistic transport, whereas in semiconductors, carriers suffer from optical and acoustic phonon scattering. The speed of electrons in a vacuum is theoretically 3×10 10 cm / s, but in semiconductors, the electron velocity is only about 5×10 7 cm / s. According to some scientists, in a vacuum transistor, it seems that only electrons can flow between the electrodes, but not holes. Unless we learn to deal with positrons, it will be impossible to do any complementary type circuits, such as CMOS. Without a complementary circuit, the power would be too high, most likely limiting the entry of vacuum transistors into the market segment. It's hard to imagine vacuum transistors ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/088H01L29/06H01L21/336
CPCH01L27/088H01L29/0688H01L29/66409
Inventor 肖德元
Owner ZING SEMICON CORP