Unlock instant, AI-driven research and patent intelligence for your innovation.

Polysilicon reduction furnace and method for growing polysilicon using polysilicon reduction furnace

A technology for growing polycrystals and reducing furnaces, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of increasing downstream gas recovery process load, low conversion rate, energy and material loss, etc., to achieve gas flow And the effect of uniform temperature distribution, lower conversion rate, lower energy and material loss

Active Publication Date: 2019-12-20
XINTE ENERGY
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Part of the fresh feed is discharged from the reactor through the outlet gas without participating in the reaction, resulting in a lower conversion rate
Low conversion not only leads to energy and material loss, but also increases the load on the downstream gas recovery process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polysilicon reduction furnace and method for growing polysilicon using polysilicon reduction furnace
  • Polysilicon reduction furnace and method for growing polysilicon using polysilicon reduction furnace

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034]This embodiment provides a polysilicon reduction furnace, the furnace chamber is divided into at least two sub-chambers by a partition, an opening is arranged on the partition, the opening is adjacent to the top or bottom of the furnace chamber, and a useful The gas inlet for air intake is provided in at least one of the remaining sub-cavities, and the gas outlet for exhaust is provided in the remaining sub-cavities. In the adjacent sub-cavities, the flow direction of the feed gas in the sub-cavities provided with air inlets is opposite to the flow direction of the feed gas in the adjacent sub-cavities. When using a polysilicon reduction furnace to produce polysilicon, the silicon core is placed in a sub-furnace chamber, and chemical vapor deposition is performed at a preset pressure.

[0035] In the polysilicon reduction furnace in this embodiment, the feed gas fed into the sub-furnace with the air inlet flows into the adjacent sub-furnace through the opening of the par...

Embodiment 2

[0037] Such as figure 1 , 2 As shown, this embodiment provides a polysilicon reduction furnace, the furnace chamber is divided into at least two sub-chambers by a partition, the partition is provided with an opening, the opening is adjacent to the top or bottom of the furnace chamber, and one of the sub-chambers An air inlet 15 for air intake is arranged inside, and an air outlet 16 for exhaust is arranged in at least one of the remaining sub-cavities. The opening of the plate flows into the adjacent sub-furnace cavity, and the flow direction of the feed gas in the sub-furnace cavity provided with the air inlet 15 is opposite to the flow direction of the feed gas in the adjacent sub-furnace cavity. When using a polysilicon reduction furnace to produce polysilicon, the silicon core is placed in a sub-furnace chamber, and chemical vapor deposition is performed at a preset pressure.

[0038] In the polysilicon reduction furnace in this embodiment, the feed gas passed into the s...

Embodiment 3

[0060] This embodiment provides a method for growing polysilicon using the polysilicon reduction furnace in Embodiment 2, comprising the following steps:

[0061] a) Install the silicon cores on the chassis corresponding to each sub-furnace cavity, cover the furnace tube, pressurize nitrogen for leak testing, nitrogen replacement, hydrogen replacement, high voltage breakdown of the silicon cores, and prepare to feed materials for chemical vapor phase after startup deposition. Check that the cooling water in the clapboard jacket is normally fed in and the temperature is within the process range. Through the air inlet of the sub-chamber of the polysilicon reduction furnace, the feed gas is introduced into the sub-chamber provided with the air inlet, and the feed gas flows into the adjacent sub-chamber through the opening of the partition plate, and there is a feed gas. The flow direction of the feed gas in the sub-cavities of the gas port is opposite to the flow direction of th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a polysilicon reduction furnace and a method for growing polysilicon by using the polysilicon reduction furnace. The furnace chamber of the polysilicon reduction furnace is divided into at least two sub-furnace chambers by a partition, and an opening is arranged on the partition, and the opening is adjacent to the top of the furnace chamber. Or the bottom of the furnace, one of the sub-chambers is provided with an air inlet for air intake, and at least one of the remaining sub-chambers is provided with an air outlet for exhaust, which leads to the sub-chamber provided with an air inlet The feed gas flows into the adjacent sub-furnace cavity through the opening of the partition, and the flow direction of the feed gas in the sub-furnace cavity with the air inlet is opposite to the flow direction of the feed gas in the adjacent sub-furnace cavity . The sub-furnace cavity in the present invention becomes a plug-flow reactor, and the feed gas flows in one direction in the sub-furnace cavity to prevent the reverse flow disturbance in the sub-furnace cavity, so that the gas flow rate and temperature in the sub-furnace cavity The distribution of the silicon rod root to the top is more uniform, especially to eliminate the stagnation phenomenon around the silicon rod beam, and reduce the beam cauliflower material.

Description

technical field [0001] The invention belongs to the technical field of polysilicon production, and in particular relates to a polysilicon reduction furnace and a method for growing polysilicon by using the polysilicon reduction furnace. Background technique [0002] Domestic production of polysilicon mostly adopts the improved Siemens method production process. In the polysilicon reduction furnace, refined chlorosilane and high-purity hydrogen undergo a chemical vapor deposition reaction at 1000-1200 ° C to generate polysilicon and deposit it on the carrier silicon core. The diameter gradually increases with time and grows into a polysilicon rod. However, due to the inhomogeneity of the flow field, temperature field, and gas phase concentration in the reactor of the polysilicon reduction furnace, the growth on the surface of the polysilicon rod is also inhomogeneous. Depending on the thickness of the flow boundary layer on the surface of the silicon rod and the speed of the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/035
CPCC01B33/035
Inventor 秦文军银波范协诚王文王瑞聪罗飞飞胡颖杜新夏高强
Owner XINTE ENERGY