Method for preparing polycrystalline silicon ingot

A polysilicon and ingot casting technology, which is applied in the field of polysilicon ingot preparation, can solve the problems of poor minority carrier distribution uniformity and polycrystalline minority carrier lifetime reduction, and achieve the effects of improving overall distribution uniformity, crystal quality, and conversion efficiency.

Inactive Publication Date: 2018-07-24
JINKO SOLAR CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Based on this, the purpose of the present invention is to solve the problems in the prior art that there are relatively high concentrations of defects and impurities in polycrystalline silicon wafers, resulting in reduced polycrystalline minority carrier lifetime and poor minority carrier distribution uniformity.

Method used

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  • Method for preparing polycrystalline silicon ingot
  • Method for preparing polycrystalline silicon ingot

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Embodiment 1

[0031] To resolve this technical issue, please refer to the figure 1 , the present invention proposes a kind of preparation method of polysilicon ingot, described method comprises the steps:

[0032] S101. After adding silicon raw material into the ingot casting furnace, continue vacuuming for a first preset time until the air pressure in the furnace reaches the first preset air pressure.

[0033] Vacuuming operation: Specifically, the silicon raw material introduced is pure silicon. The first preset time for vacuuming is 0.5-1 hour, and the air pressure in the ingot casting furnace should be controlled within the first preset air pressure after vacuuming. Wherein the first preset air pressure is less than 0.1 mbar, and the air pressure is close to a vacuum state. It should also be pointed out here that, during vacuuming, the ingot casting furnace is not heated, and the temperature in the ingot casting furnace needs to be controlled below 300°C.

[0034] S102. Continue heat...

Embodiment 2

[0048] The second embodiment of the present invention proposes a method for preparing a polysilicon ingot, the preparation method comprising the following steps:

[0049] (1) Vacuuming operation: After adding silicon raw materials into the ingot furnace, continue vacuuming for 0.5h until the air pressure in the furnace is less than 0.1mbar.

[0050] It should also be pointed out here that, during vacuuming, the ingot casting furnace is not heated, and the temperature in the ingot casting furnace needs to be controlled below 300°C.

[0051] (2) Heating operation: maintain the vacuum state in the ingot casting furnace, and continue heating the ingot casting furnace for 4 hours until the temperature in the ingot casting furnace is 1100°C.

[0052] (3) Melting operation: raise the temperature in the ingot casting furnace to 1400° C., and introduce argon gas so that the air pressure in the ingot casting furnace rises to 400 mbar, and carry out the melting operation for 12 hours.

...

no. 3 example

[0060] The third embodiment of the present invention proposes a method for preparing a polysilicon ingot, the preparation method comprising the following steps:

[0061] (1) Vacuuming operation: After adding silicon raw materials into the ingot furnace, continue vacuuming for 1 hour until the air pressure in the furnace is less than 0.1mbar.

[0062] It should also be pointed out here that, during vacuuming, the ingot casting furnace is not heated, and the temperature in the ingot casting furnace needs to be controlled below 300°C.

[0063] (2) Heating operation: maintain the vacuum state in the ingot casting furnace, and continue heating the ingot casting furnace for 8 hours until the temperature in the ingot casting furnace is 1300°C.

[0064] (3) Melting operation: raise the temperature in the ingot casting furnace to 1600° C., and introduce argon gas so that the air pressure in the ingot casting furnace rises to 600 mbar, and carry out the melting operation for 18 hours. ...

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Abstract

The invention relates to a method for preparing polycrystalline silicon ingots. The method comprises the following steps: putting a silicon raw material into an ingot casting furnace, and continuouslyvacuuming for a first preset time till the pressure inside the furnace is first preset pressure; continuously heating for a second preset time till the temperature inside the furnace is a first preset temperature; increasing the temperature inside the furnace to a second preset temperature, reducing the pressure to second preset pressure, and carrying out melting operation for a third preset time; introducing a hydrogen-containing purifier into the furnace, setting the temperature inside the furnace to a third preset temperature, and carrying out crystal growth operation for a fourth preset time; continuously introducing the hydrogen-containing purifier into the furnace, setting the temperature inside the furnace to a fourth preset temperature, and carrying out annealing operation for a fifth preset time; reducing the temperature inside the furnace to a fifth preset temperature, increasing the pressure inside the furnace to the third preset pressure, and discharging the finished product from the furnace, so as to obtain the polycrystalline silicon ingots. By adopting the method, the overall distribution uniformity of molecules in silicon ingots can be improved, and the crystal quality and the conversion efficiency can be improved.

Description

technical field [0001] The invention relates to the technical field of crystal growth, in particular to a method for preparing polycrystalline silicon ingots. Background technique [0002] Since entering this century, the photovoltaic industry has become the fastest growing high-tech industry in the world. Among all kinds of solar cells, crystalline silicon (single crystal, polycrystalline) solar cells occupy an extremely important position. [0003] At present, crystalline silicon solar cells have occupied more than 75% of the photovoltaic market. Crystalline silicon solar cells use the photovoltaic effect of the p-n junction to realize photoelectric conversion. From a development point of view, crystalline silicon solar cells will still occupy a dominant position for a long time in the future. Due to the unique advantages of crystalline silicon solar cells, the demand for its application has also increased year by year in recent years, thus promoting the industrial prod...

Claims

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Application Information

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IPC IPC(8): C30B28/06C30B29/06C30B33/02
CPCC30B28/06C30B29/06C30B33/02
Inventor 毛亮亮杨津玫唐碧见冷金标雷鸣龙昭钦周慧敏徐志群
Owner JINKO SOLAR CO LTD
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