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High Florey Huggins parameter block polymers and random polymers for directional self-assembly, and methods for their preparation and self-assembly

A technology of block polymer and polymer, which can be applied in the direction of photoengraving process, optomechanical equipment and instrument of pattern surface, which can solve the problems of expensive equipment and complicated process.

Active Publication Date: 2020-10-09
KEMPUR MICROELECTRONICS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In particular, there are many difficulties in the application of pattern processing technology below 20nm, such as extremely expensive equipment and extremely complicated process

Method used

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  • High Florey Huggins parameter block polymers and random polymers for directional self-assembly, and methods for their preparation and self-assembly
  • High Florey Huggins parameter block polymers and random polymers for directional self-assembly, and methods for their preparation and self-assembly
  • High Florey Huggins parameter block polymers and random polymers for directional self-assembly, and methods for their preparation and self-assembly

Examples

Experimental program
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Effect test

Embodiment 1

[0075] Under anhydrous and oxygen-free conditions, 250 mL of tetrahydrofuran (THF) that had been dehydrated and deoxygenated was added to the reaction flask, and the temperature of the reaction flask was lowered to -78° C. after three freeze-thaw cycles. Under the protection of dry helium, after adding 0.1mL of 2.5M n-butyllithium cyclohexane solution, 1.97g of p-tert-butoxystyrene (tBOS) was added, and after one hour of reaction, 0.1mL of diphenylethylene ( DPE) was reacted for half an hour, and after all active reaction ends were connected with DPE, 2.12 g of tert-butyldimethylsiloxane-protected hydroxyethyl methacrylate (HEMAtBDMS) was added Continue to react for one hour. After the reaction was completed, 4 mL of methanol that had undergone three freeze-thaw cycles was added to the reaction bottle to terminate the reaction. The reaction product was added dropwise to the methanol solution, the precipitate was filtered and washed several times, such as three times, and the...

Embodiment 2

[0080] Under anhydrous and oxygen-free conditions, 250 mL of tetrahydrofuran (THF) that had been dehydrated and deoxygenated was added to the reaction flask, and the temperature of the reaction flask was lowered to -78° C. after three freeze-thaw cycles. Under the protection of dry helium, add 0.6mL of 2.5M n-butyllithium cyclohexane solution, add 4.80g of tert-butylstyrene (tBS), react for one hour, add 1.8mL of diphenylethylene (DPE) React for half an hour, after all active reaction ends are connected with DPE, add 7.74g hydroxypropyl methacrylate (HPMAtBDMS) protected by tert-butyldimethylsiloxane Continue to react for one hour. After the reaction was completed, 4 mL of methanol that had undergone three freeze-thaw cycles was added to the reaction bottle to terminate the reaction. Add the reaction product dropwise to the methanol solution, suction filter and wash the precipitate several times, such as three times, and vacuum dry at room temperature to obtain the block pol...

Embodiment 3

[0085] Under anhydrous and oxygen-free conditions, 250 mL of tetrahydrofuran (THF) that had been dehydrated and deoxygenated was added to the reaction flask, and the temperature of the reaction flask was lowered to -78° C. after three freeze-thaw cycles. Under the protection of dry helium, after adding 0.429mL of 2.5M n-butyllithium cyclohexane solution, 3.52g of tert-butoxystyrene (tBOS) was added, and after one hour of reaction, 0.3mL of diphenylethylene (DPE ) to react for half an hour, after all active reaction ends are connected with DPE, add 4.81g of diethylene glycol methacrylate (DEGMEAtBDMS) protected by tert-butyldimethylsiloxane Continue to react for one hour. After the reaction was completed, 4 mL of methanol that had undergone three freeze-thaw cycles was added to the reaction bottle to terminate the reaction. Add the reaction product dropwise to the methanol solution, suction filter and wash the precipitate several times, such as three times, and vacuum dry at r...

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Abstract

The invention specifically relates to a block polymer with a high Flory-Huggins interaction parameter and for directed self-assembly, a random polymer, preparation methods for the block polymer and the random polymer, and a self-assembling method, belonging to the field of synthesis and application of high-molecular compounds. The block polymer is prepared through anionic polymerization, the Flory-Huggins interaction parameter among blocks is great, and compatibility is low. The random polymer is prepared through free radical polymerization of the monomers of the block polymer and epoxy methylacrylate monomers, and the random polymer is neutral to the blocks of the block polymer. The block polymer provided by the invention coats a cross-linked random polymer neutral layer and undergoes annealing heat treatment so as to form a phase separation structure perpendicular to a substrate, so production efficiency is improved, and a pattern with a size of 20 nm or below can be formed. The block polymer and the random polymer are applied to pattern transfer in the field of microelectronics, and process requirements and production cost are lowered.

Description

technical field [0001] The present invention belongs to the synthesis and application of polymer compounds. Specifically, the present invention relates to block polymers and random polymers with high Flory-Huggins parameters, which can be used to form directed self-assembly of patterns below 20 nm, and their preparation methods and self-assembly method. Background technique [0002] In the modern semiconductor industry, the cost and performance of integrated circuits are closely related to the critical dimensions they can achieve. In order to obtain the pattern of the nanoscale critical dimension, the traditional method of using photolithography is widely used. In the traditional photolithography process, ultraviolet light (UV) is irradiated onto the substrate coated with photoresist after passing through the mask, so that a chemical reaction occurs inside the photoresist, causing the solubility of the exposed area and the unexposed area to change in the developer. Change ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08F293/00C08F212/14C08F230/08C08F220/32C08F220/20G03F7/00
CPCC08F220/20C08F293/005G03F7/0035C08F212/14C08F230/08C08F220/32
Inventor 李海波李冰马克·奈舍刘德军
Owner KEMPUR MICROELECTRONICS