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A Gaas-based algainp single-sided double-electrode high brightness quaternary light-emitting diode filament and preparation method thereof

A light-emitting diode and filament technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problem of material cost, labor cost, production efficiency, and yield constraints of LED filament lamps, and no bright light-emitting diode LED filament and preparation process, It is difficult to meet the technical requirements of the LED filament manufacturing process, etc., to achieve the effects of increased production efficiency, reduced costs, and reduced packaging production costs

Active Publication Date: 2020-10-16
山东三晶照明科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the difference in process, the requirements for materials are different, which also makes it difficult for relevant material manufacturers to meet the technical requirements of the LED filament manufacturing process.
Material cost, labor cost, production efficiency, yield rate, etc. are all bottlenecks restricting the production of LED filament lamps
[0004] Since the AlGaInP quaternary red-yellow series of GaAs substrates are different-surface electrodes, it is quite technically difficult to apply the chip manufacturing process of the AlGaInP quaternary red-yellow series of GaAs substrates to the production of LED filament lamps, that is, there is no known Report on LED Filament and Preparation Process of AlGaInP Quaternary Single-sided Double-electrode High Brightness Light-Emitting Diode on GaAs Substrate

Method used

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  • A Gaas-based algainp single-sided double-electrode high brightness quaternary light-emitting diode filament and preparation method thereof
  • A Gaas-based algainp single-sided double-electrode high brightness quaternary light-emitting diode filament and preparation method thereof

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Embodiment 1

[0048] A method for manufacturing a filament of a GaAs-based AlGaInP quaternary light-emitting diode, based on a chip process, including cutting the chip in half one by one after the epitaxial growth and electrode manufacturing steps of the LED chip are completed, and then splitting according to a fixed period, including Proceed as follows:

[0049] (1) GaAs layer 116, DBR layer (Bragg reflection layer) 115, N-type AlGaInP layer 114, quantum well active region 113, P-type AlGaInP layer 112 and GaP layer 111 are sequentially prepared on GaAs substrate 117 by MOCVD process. A P electrode 110 is fabricated on the GaP layer 111, a mesa 213 is fabricated on the N-type AlGaInP layer 114, an N electrode 118 is fabricated on the mesa, and an LED chip is manufactured. structured as figure 1 As shown; the manufactured LED chip is etched from top to bottom from the GaP layer 112 to the N-type AlGaInP layer 114 along the side of the tube core to make the mesa 213, and the etching depth i...

Embodiment 2

[0067] A method for manufacturing a GaAs-based AlGaInP quaternary light-emitting diode filament, wherein, after the epitaxial growth of the LED chip and the electrode manufacturing steps are completed, the chip is cut in half one by one, and then split according to a fixed period, and other steps are as in the embodiment 1, the difference is:

[0068] In step (1), the LED chip made is etched from top to bottom from the GaP layer 112 to the N-type AlGaInP layer 114 along the tube core side to make a mesa 213, and the etching depth is 50 μm; the DBR layer is 12 N-type Al 0.5 Ga 0.5 As / AlAs system. The quantum well active region is an AlGaInP multi-quantum well active layer with a thickness of 0.4 μm;

[0069] The thickness of the GaAs substrate is 180 μm, the thickness of the GaAs layer 116 is 8 μm, the thickness of the N-type AlGaInP layer 114 is 0.8 μm, the thickness of the P-type AlGaInP layer 112 is 0.8 μm, and the thickness of the GaP layer 111 is 6 μm. GaAs substrates ...

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Abstract

The invention relates to a GaAs-based AlGaInP quaternary light-emitting diode filament and a preparation method thereof. The filament comprises a GaAs-based AlGaInP quaternary light-emitting diode chip, two ends of each periodic unit of the chip are etched to form end surfaces, and metal lead electrodes are formed on the end surfaces. The horizontal ring cut of the chip unit is formed by etching along one side of the chip unit in each periodic unit, and a gap is formed between the chip units on the GaAs substrate. A DBR layer is oxidized to be an insulating layer. After the split, the GaAs substrate is used as a substrate, P electrode and N electrode wires between adjacent chip units in the periodic unit are connected, a fluorescent glue coating layer completely covers each chip unit and the substrate, and a part of a pin line is exposed outside the fluorescent glue coating layer. According to the filament and the preparation method, an LED packaging problem is broken, the overall costof an epitaxial chip to the LED filament is reduced by more than 55%, the filament can be directly packaged, and the package output rate is improved.

Description

technical field [0001] The invention relates to a GaAs-based AlGaInP single-sided double-electrode high-brightness quaternary light-emitting diode filament and a preparation method thereof, belonging to the technical field of LED filament preparation. Background technique [0002] At present, in the LED lighting market, on the one hand, the state fully supports the LED industry; on the other hand, because the production cost of LED lighting fixtures remains high, the retail price of LED lighting products is too high, and it is difficult to make LED lighting fixtures enter thousands of households. Ten thousand households. The invention of LED filament solves this contradiction, and its unique shape and high cost performance are widely welcomed. On the other hand, LED filament lamps have lowered the barriers for traditional lighting manufacturers to transform into the LED lighting field. Now the LED filament lamp is mainly composed of LED filament, driving power supply, glas...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/32H01L33/10H01L33/06H01L33/36H01L33/62H01L33/00
CPCH01L33/0075H01L33/06H01L33/10H01L33/32H01L33/36H01L33/62
Inventor 刘琦闫宝华
Owner 山东三晶照明科技有限公司