Production method of BiVO4/Ag3PO4 film for photoelectrocatalytic water decomposition

A photoelectric catalysis, thin film technology, applied in chemical instruments and methods, electrolysis process, electrolysis components, etc., can solve the problems of easy compounding, slow surface water oxidation kinetics, etc., achieve broad application prospects, improve photoelectric conversion efficiency, start The effect of low potential

Active Publication Date: 2018-08-03
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the use of bismuth vanadate as a photoanode still has many shortcomings, such as the easy recombination of photogenerated holes and electrons, and the slow kinetics of surface water oxidation.

Method used

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  • Production method of BiVO4/Ag3PO4 film for photoelectrocatalytic water decomposition
  • Production method of BiVO4/Ag3PO4 film for photoelectrocatalytic water decomposition
  • Production method of BiVO4/Ag3PO4 film for photoelectrocatalytic water decomposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] 1) Dissolve 0.395 g of bismuth nitrate and 0.438 g of ethylenediaminetetraacetic acid in 15ml of water, adjust the pH of the solution to 10 with concentrated ammonia water, stir until a colorless and transparent solution is formed, and weigh 0.117 g of ammonium metavanadate and 0.141 g of ethylenediaminetetraacetic acid were dissolved in 15 ml of water, and the pH of the solution was adjusted to 10 with concentrated ammonia water, and stirred until a yellow transparent solution was formed. The two solutions were mixed and stirred evenly to prepare a bismuth vanadate seed layer precursor;

[0041] 2) Spin-coat the bismuth vanadate precursor solution on the FTO conductive glass, heat-treat at 500°C for 15 minutes after each spin-coating, spin-coat 3 times, 10 drops each time, and then heat-treat at 500°C for 1 hour to obtain vanadium bismuth acid seed layer;

[0042] 3) Dissolve 0.12 g of bismuth nitrate and 0.132 g of ethylenediaminetetraacetic acid in 30 ml of water, adju...

Embodiment 2

[0051] 1) Dissolve 0.395 g of bismuth nitrate and 0.438 g of ethylenediaminetetraacetic acid in 15ml of water, adjust the pH of the solution to 10 with concentrated ammonia water, stir until a colorless and transparent solution is formed, and weigh 0.117 g of ammonium metavanadate and 0.141 g of ethylenediaminetetraacetic acid were dissolved in 15 ml of water, and the pH of the solution was adjusted to 10 with concentrated ammonia water, and stirred until a yellow transparent solution was formed. The two solutions were mixed and stirred evenly to prepare a bismuth vanadate seed layer precursor;

[0052] 2) Spin-coat the bismuth vanadate precursor solution on the FTO conductive glass, heat-treat at 500°C for 15 minutes after each spin-coating, spin-coat 3 times, 10 drops each time, and then heat-treat at 500°C for 1 hour to obtain vanadium bismuth acid seed layer;

[0053] 3) Dissolve 0.12 g of bismuth nitrate and 0.132 g of ethylenediaminetetraacetic acid in 30 ml of water, ad...

Embodiment 3

[0060] 1) Dissolve 0.395 g of bismuth nitrate and 0.438 g of ethylenediaminetetraacetic acid in 15ml of water, adjust the pH of the solution to 10 with concentrated ammonia water, stir until a colorless and transparent solution is formed, and weigh 0.117 g of ammonium metavanadate and 0.141 g of ethylenediaminetetraacetic acid were dissolved in 15 ml of water, and the pH of the solution was adjusted to 10 with concentrated ammonia water, and stirred until a yellow transparent solution was formed. The two solutions were mixed and stirred evenly to prepare a bismuth vanadate seed layer precursor;

[0061] 2) Spin-coat the bismuth vanadate precursor solution on the FTO conductive glass, heat-treat at 500°C for 15 minutes after each spin-coating, spin-coat 3 times, 10 drops each time, and then heat-treat at 500°C for 1 hour to obtain vanadium bismuth acid seed layer;

[0062] 3) Dissolve 0.12 g of bismuth nitrate and 0.132 g of ethylenediaminetetraacetic acid in 30 ml of water, ad...

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Abstract

The invention discloses a production method of a BiVO4 / Ag3PO4 film for photoelectrocatalytic water decomposition, and belongs to the field of inorganic nonmetal materials. The method comprises the following steps: Step 1, preparing a bismuth vanadate seed layer precursor solution; Step 2, producing a bismuth vanadate seed layer; Step 3, producing a bismuth vanadate film; and Step 4, depositing Ag3PO4 by a three-electrode system. The BiVO4 / Ag3PO4 film produced by the method has the advantages of high photoelectric conversion efficiency, low initial potential of water photooxidation, and broad application prospects in the fields of photocatalytic degradation, photoelectrocatalytic water decomposition, artificial photosynthesis, light-assisted energy storage batteries and the like.

Description

technical field [0001] The invention belongs to the field of inorganic non-metallic materials, and relates to a method for preparing a bismuth vanadate film modified with silver phosphate for photoelectric catalytic water splitting, and specifically refers to a kind of BiVO for photoelectric catalytic water splitting 4 / Ag 3 PO 4 The method of film preparation. Background technique [0002] Since the beginning of the 21st century, the problems of environmental pollution and energy crisis have been aggravated, and have become urgent problems faced by human society. For the sustainable development of human society, it is imminent to research and develop new pollution-free energy technologies. As a new energy source, solar energy is non-polluting and inexhaustible, so the conversion and utilization of solar energy has become one of the current research hotspots. Since Japanese scholars first reported the use of titanium dioxide photoanode for photoelectric water splitting i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/186B01J35/06C25B1/04C25B11/06
CPCB01J27/186B01J35/0033B01J35/004B01J35/065C25B1/04C25B11/04Y02E60/36
Inventor 王涛高斌范晓莉冯亚亚龚浩李晶晶郭虎何建平黄现礼
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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