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A semiconductor heterojunction varactor device with lateral structure

A horizontal structure and semiconductor technology, applied in the field of varactors, can solve the problems of large series resistance and low device frequency

Active Publication Date: 2021-02-26
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention provides a semiconductor heterojunction varactor device with a lateral structure, aiming to solve the junction problem caused by the fact that the metal electrode does not form direct Schottky contact with the two-dimensional electron gas (2DEG) of the heterojunction in the prior art. Problems with excessive capacitance, series resistance, and device frequency that is too low

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  • A semiconductor heterojunction varactor device with lateral structure
  • A semiconductor heterojunction varactor device with lateral structure

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Embodiment 1

[0021] refer to figure 1 , a semiconductor heterojunction varactor device with a lateral structure, which sequentially includes a substrate 11, a buffer layer semiconductor 12, a heterojunction semiconductor structure, a cap layer semiconductor 16, a dielectric layer 17, a metal anode 18 and a metal cathode from bottom to top 19. There is at least one heterojunction semiconductor structure, and each heterojunction semiconductor structure is composed of a lower channel layer 13 and an upper barrier layer 15, and a two-dimensional electron gas 14 exists on the channel layer 13; The upper surface of the heterojunction semiconductor structure is provided with a groove, and the bottom of the groove is located below the two-dimensional electron gas 14, the metal anode 18 and the metal cathode 19 are respectively located in different grooves, the metal anode 18 and the metal cathode 19 are both Schottky contacts are formed with the groove sidewalls.

[0022] refer to figure 1 , bot...

Embodiment 2

[0030] refer to figure 2 , the difference from Embodiment 1 is that neither the metal anode 18 nor the metal cathode 19 completely fills the groove, and only directly contacts the side of the heterojunction semiconductor structure in the device region. The cross-sections of the metal anode and the metal cathode are not limited in shape under the condition of forming Schottky contacts with the 2DEG.

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Abstract

The present invention provides a semiconductor heterojunction varactor device with a lateral structure, aiming to solve the problem of excessive junction capacitance and series resistance caused by the existing metal electrodes not forming direct Schottky contact with the two-dimensional electron gas of the heterojunction. The device frequency is too low. The present invention includes a substrate, a buffer layer semiconductor, a heterojunction semiconductor structure, a cap layer semiconductor, a dielectric layer, a metal anode and a metal cathode; the junction semiconductor structure is composed of a channel layer and a barrier layer, and there are Two-dimensional electron gas; grooves are opened on the upper surface of the heterojunction semiconductor structure, and the metal anode and metal cathode are respectively located in different grooves, and both the metal anode and the metal cathode form Schottky contacts with the side walls of the groove. Both the metal anode and the metal cathode form a one-dimensional Schottky contact with the two-dimensional electron gas of the heterojunction semiconductor structure, which greatly reduces the zero bias capacitance and series resistance of the varactor, and significantly improves the capacitance. The non-linearity improves the high-frequency characteristics of the device.

Description

technical field [0001] The invention relates to the technical field of varactors in terahertz high-frequency devices, and in particular to a semiconductor heterojunction varactor device with a lateral structure. Background technique [0002] Terahertz (THz) waves are defined between 0.1THz and 10THz, between microwave and infrared, and have extremely important academic value and practical significance. The lack of high power, low cost and portable room temperature terahertz source is the most important factor limiting the application of terahertz technology. Schottky diodes (SBDs) are the key core devices of solid-state frequency doubling circuits, and realizing millimeter wave and terahertz wave integrated circuits through SBD device frequency doubling is an important and effective method to realize all-solid-state terahertz sources. [0003] There are many kinds of SBD structures for high-frequency applications, such as vertical structures and lateral structures, but all ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/92H01L29/93H01L29/417H01L21/329
CPCH01L29/417H01L29/6609H01L29/92H01L29/93
Inventor 曾建平李倩安宁谭为
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS