Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

NiO-based memristor device with analog and digital multifunctions and prepared by adopting solution combustion method, and preparation method thereof

A technology of solution combustion and memristive devices, which is applied in the field of microelectronics, can solve the problems that single devices are rarely reported and the resistance switching mechanism of analog memristive devices is unclear, and achieve low cost, reduced manufacturing complexity, and process compatibility Good results

Inactive Publication Date: 2018-08-03
SUN YAT SEN UNIV
View PDF3 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In contrast, the resistive switching mechanism of analog memristive devices is still unclear
In particular, a single device with both analog and digital resistive switching properties has rarely been reported

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • NiO-based memristor device with analog and digital multifunctions and prepared by adopting solution combustion method, and preparation method thereof
  • NiO-based memristor device with analog and digital multifunctions and prepared by adopting solution combustion method, and preparation method thereof
  • NiO-based memristor device with analog and digital multifunctions and prepared by adopting solution combustion method, and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The accompanying drawings are for illustrative purposes only, and should not be construed as limitations on this patent; in order to better illustrate this embodiment, certain components in the accompanying drawings will be omitted, enlarged or reduced, and do not represent the size of the actual product; for those skilled in the art It is understandable that some well-known structures and descriptions thereof may be omitted in the drawings. The positional relationship described in the drawings is for illustrative purposes only, and should not be construed as a limitation on this patent.

[0032] figure 1 It is Si / SiO in the embodiment of the present invention 2 Schematic diagram of the structure of a / Ti / Pt / NiO / Ag memristor. Including substrate Si / SiO 2 , the bottom electrode Ti / Pt, the resistive dielectric layer NiO, and the top electrode Ag. Si / SiO in the embodiment of the present invention 2 The specific preparation process of / Ti / Pt / NiO / Ag memristor is as foll...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of microelectronics, and more particularly relates to a NiO-based memristor device with analog and digital multifunctions and prepared by adopting a solution combustion method, and a preparation method of the NiO-based memristor device. The NiO-based memristor device with analog and digital multifunctions and prepared by adopting the solution combustionmethod comprises a substrate, a metal bottom electrode, a NiO-based variable-resistance dielectric layer and a metal top electrode from bottom to top. The preparation of the NiO-based memristor device is characterized in that the NiO-based variable-resistance dielectric layer is prepared by adopting the solution combustion method and a coating process. The preparation method has the advantages that a variable-resistance dielectric layer thin film is prepared by adopting the solution combustion method and a printing process, and the film forming temperature is low, the equipment is simple, novacuum is required, the cost is low and the thin film is suitable for large-area preparation when compared with the traditional process of preparing thin films through vacuum deposition.

Description

technical field [0001] The invention relates to the technical field of microelectronics, more specifically, to a NiO-based memristive device with analog and digital functions prepared by a solution combustion method and a preparation method. Background technique [0002] Memristors are two-terminal nonvolatile memory devices based on resistance transitions, which can be divided into two types: analog memristors and digital memristors. Digital memristor has simple structure, high density and low power consumption, and has been widely studied as a new generation of non-volatile memory. Analog memristors have the characteristics of continuously adjustable resistance, and can be used as analog non-volatile memories in programmable analog circuits, especially as artificial synapses in new computing such as neural networks and artificial intelligence. [0003] The memristive device has a simple structure, usually a metal / dielectric layer [0004] / Metal sandwich structure, trans...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L45/00
CPCH10N70/8833H10N70/021
Inventor 李亚裴艳丽储金星
Owner SUN YAT SEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com