Preparation method for low-stress compact coating layer
A low-stress, coating technology, which is applied in the preparation of thick/ultra-thick coatings and the preparation of low-stress dense coatings, can solve the problems of poor mechanical properties of coatings, degradation of substrate properties, stress relief, etc. Stress, low equipment requirements, high compactness effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0016] Example 1: Preparation of low-stress dense TiAlN coating
[0017] Ti 6 Al 4 V samples (workpieces) are cleaned and put into a vacuum chamber to evacuate to 6X10 -4 Pa. The inert gas argon was introduced, the bias voltage was -800V to -1000V, and the surface of the sample was etched for 20 minutes. The inert gas argon is introduced, and the intermediate layer Ti, etc. is sputtered, with a thickness of about 200nm. Argon, krypton, xenon and nitrogen are introduced, the content of argon in the inert gas is 1%, the content of krypton in the inert gas is 1%, the content of xenon in the inert gas is 98%, nitrogen is mixed The content in the gas is 7%, and the TiAl target DC sputtering power density is 10W / cm 2 , the ionization rate is 10%, the bias voltage is -50V, the deposition time is 10 hours, the thickness of the obtained TiAlN coating is 20um, the density is 99%, and the stress is -100MPa.
Embodiment 2
[0018] Example 2: Preparation of low-stress dense TiAlN coating
[0019] Ti 6 Al 4 The V sample is cleaned and put into a vacuum chamber to evacuate to 6X10 -4 Pa. The inert gas argon was introduced, the bias voltage was -800V to -1000V, and the surface of the sample was etched for 20 minutes. The inert gas argon is introduced, and the intermediate layer Ti, etc. is sputtered, with a thickness of about 200nm. Incorporate argon, krypton, xenon and nitrogen, the content of argon in the inert gas is 1%, the content of krypton in the inert gas is 20%, the content of xenon in the inert gas is 69%, nitrogen in the mixed gas The content is 7%, and the TiAl target DC sputtering power density is 10W / cm 2 , the ionization rate is 10%, the bias voltage is -50V, the deposition time is 10 hours, the thickness of the obtained TiAlN coating is 20um, the density is 98%, and the stress is -800MPa.
Embodiment 3
[0020] Example 3: Preparation of low-stress dense TiAlN coating
[0021] Ti 6 Al 4 The V matrix sample is cleaned and put into a vacuum chamber to evacuate to 6X10 -4 Pa. The inert gas argon was introduced, the bias voltage was -800V to -1000V, and the surface of the sample was etched for 20 minutes. The inert gas argon is introduced, and the intermediate layer Ti, etc. is sputtered, with a thickness of about 200nm. Incorporate argon, krypton, xenon and nitrogen, the content of argon in the inert gas is 20%, the content of krypton in the inert gas is 1%, the content of xenon in the inert gas is 69%, nitrogen in the mixed gas The content is 7%, and the TiAl target DC sputtering power density is 10W / cm 2 , the ionization rate is 10%, the bias voltage is -50V, the deposition time is 10 hours, the thickness of the obtained TiAlN coating is 20um, the density is 99%, and the stress is -500MPa.
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com