A kind of preparation method of flexible film varactor

A flexible film and varactor technology, which is applied in semiconductor/solid-state device manufacturing, vacuum evaporation plating, coating, etc., to achieve the effects of good flexibility, high tuning rate, and good device stability

Inactive Publication Date: 2020-06-02
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the limitation of flexible substrate and preparation technology, there is no flexible varactor based on it.

Method used

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  • A kind of preparation method of flexible film varactor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] (1) Clean the copper foil surface with a purity of 99%, a surface roughness of 100nm, and a thickness of 100um, and put it on the sample stage in the magnetron sputtering chamber as a flexible substrate;

[0025] (2) Install the Al-doped zinc oxide target on the target head of magnetron sputtering, and the distance between the target and the substrate is 60 mm.

[0026] (3) After step (2) is completed, the background vacuum of the magnetron sputtering system is pumped to 3.0×10 -4 Pa, use Ar gas as the sputtering gas to sputter the Al-doped zinc oxide thin film layer, the purity of Ar is 99.99%, the radiation power is 80W, and the substrate temperature is 300°C, and the Al-doped zinc oxide film with a thickness of 200nm is deposited. film layer.

[0027] (4) Take out the substrate, cover it with a mask plate on the surface of the Al-doped zinc oxide film layer, leave the position of the bottom electrode, and put it on the sample stage in the magnetron sputtering chambe...

Embodiment 2

[0033] (1) Clean the surface of the copper foil with a purity of 99%, a surface roughness of 100nm and a thickness of 100um, and put it on the sample stage in the magnetron sputtering chamber as a flexible substrate.

[0034] (2) Install the Al-doped zinc oxide target on the target head of magnetron sputtering, and the distance between the target and the substrate is 60 mm.

[0035] (3) After step (2) is completed, the background vacuum of the magnetron sputtering system is pumped to 5.0×10 -4 Pa, use Ar gas as the sputtering gas to sputter the Al-doped zinc oxide thin film layer, the purity of Ar is 99.99%, the sputtering power is 80W, and the substrate temperature is 500°C, and the Al-doped zinc oxide film with a thickness of 100nm is deposited. film layer.

[0036] (4) Take out the substrate, cover it with a mask plate on the surface of the Al-doped zinc oxide film layer, leave the position of the bottom electrode, and put it on the sample stage in the magnetron sputtering...

Embodiment 3

[0042] (1) Clean the surface of the copper foil with a purity of 99%, a surface roughness of 100nm and a thickness of 100um, and put it on the sample stage in the magnetron sputtering chamber as a flexible substrate.

[0043] (2) Install the Al-doped zinc oxide target on the target head of magnetron sputtering, and the distance between the target and the substrate is 60 mm.

[0044] (3) After step (2) is completed, the background vacuum of the magnetron sputtering system is pumped to 9.0×10 -4 Pa, use Ar gas as the sputtering gas to sputter the Al-doped zinc oxide film layer, the purity of Ar is 99.99%, the sputtering power is 80W, and the substrate temperature is 100°C to deposit a 400nm thick Al-doped zinc oxide film layer.

[0045] (4) Take out the substrate, cover it with a mask plate on the surface of the Al-doped zinc oxide film layer, leave the position of the bottom electrode, and put it on the sample stage in the magnetron sputtering chamber.

[0046] (5) BZT is BaZr ...

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Abstract

The invention discloses a preparation method of a flexible thin film varactor. The preparation method comprises the following steps of taking a copper foil as a flexible substrate, taking Al, Ga or In-doped zinc oxide as a target material, performing vacuumizing on the system base to 3.0*10<-3>Pa or below, taking Ar gas as sputtering gas to perform sputtering on an Al, Ga or In-doped zinc oxide thin film layer, and performing deposition to obtain the Al, Ga or In-doped zinc oxide thin film layer with thickness of 50-1,000nm; next, taking BaZr<0.2>Ti<0.8>O<3> as the target material, performingvacuumizing on the system base to 1.0*10<-3>Pa or below, taking Ar and O<2> as sputtering gas at the partial pressure ratio of oxygen to argon of 1:4-15, performing deposition to obtain a BaZr<0.2>Ti<0.8>O<3> thin film layer of 150-800nm; and doping a BZT thin film layer and a bottom electrode with the Al, Ga or In-doped zinc oxide thin film layer to prepare metal electrodes on the surface to prepare the flexible thin film varactor. The flexible thin film varactor disclosed in the invention has dietetic tuning rate of greater than or equal to 50%@100kHz, dielectric loss of less than 0.03, andthe performance change rate is less than or equal to 10% when the flexible radius of curvature is 5.0mm.

Description

technical field [0001] The invention belongs to a ceramic composition characterized by components, in particular to a flexible film varactor and a preparation method thereof. Background technique [0002] Varactors have an important application in communication electronic circuits, which can realize the reception and transmission of communication signals. At present, with the development of mobile communication equipment in the direction of flexibility, traditional hard film varactors can no longer meet the needs of flexible electronic circuits, and flexible film varactors continue to be developed to achieve matching and compatibility with flexible circuits. [0003] BYZGR 0.2 Ti 0.8 o 3 (BZT), as the most widely studied dielectric tuning thin film material, has the advantages of high dielectric tuning rate and large dielectric constant, and is often used to prepare rigid varactors on silicon-based substrates. Due to the limitations of flexible substrates and fabrication...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/34H01L29/92C23C14/08C23C14/35C23C14/04
CPCC23C14/042C23C14/08C23C14/086C23C14/352H01L29/66969H01L29/92
Inventor 于仕辉刘荣闯赵乐李玲霞孙永涛
Owner TIANJIN UNIV
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