A kind of preparation method of flexible film varactor

Abstract

The invention discloses a preparation method of a flexible thin film varactor. The preparation method comprises the following steps of taking a copper foil as a flexible substrate, taking Al, Ga or In-doped zinc oxide as a target material, performing vacuumizing on the system base to 3.0*10<-3>Pa or below, taking Ar gas as sputtering gas to perform sputtering on an Al, Ga or In-doped zinc oxide thin film layer, and performing deposition to obtain the Al, Ga or In-doped zinc oxide thin film layer with thickness of 50-1,000nm; next, taking BaZr<0.2>Ti<0.8>O<3> as the target material, performingvacuumizing on the system base to 1.0*10<-3>Pa or below, taking Ar and O<2> as sputtering gas at the partial pressure ratio of oxygen to argon of 1:4-15, performing deposition to obtain a BaZr<0.2>Ti<0.8>O<3> thin film layer of 150-800nm; and doping a BZT thin film layer and a bottom electrode with the Al, Ga or In-doped zinc oxide thin film layer to prepare metal electrodes on the surface to prepare the flexible thin film varactor. The flexible thin film varactor disclosed in the invention has dietetic tuning rate of greater than or equal to 50%@100kHz, dielectric loss of less than 0.03, andthe performance change rate is less than or equal to 10% when the flexible radius of curvature is 5.0mm.

Description

technical field

[0001] The invention belongs to a ceramic composition characterized by components, in particular to a flexible film varactor and a preparation method thereof. Background technique

[0002] Varactors have an important application in communication electronic circuits, which can realize the reception and transmission of communication signals. At present, with the development of mobile communication equipment in the direction of flexibility, traditional hard film varactors can no longer meet the needs of flexible electronic circuits, and flexible film varactors continue to be developed to achieve matching and compatibility with flexible circuits.

[0003] BYZGR 0.2 Ti 0.8 o 3 (BZT), as the most widely studied dielectric tuning thin film material, has the advantages of high dielectric tuning rate and large dielectric constant, and is often used to prepare rigid varactors on silicon-based substrates. Due to the limitations of flexible substrates and fabrication...

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