A power semiconductor device and a manufacturing method thereof

Abstract

The invention discloses a power semiconductor device and a manufacturing method thereof. The power semiconductor device includes a substrate; a gallium nitride layer is installed on the substrate, thegallium nitride layer includes a grid area, a source electrode area and a drain electrode area; the surface of the grid area is provided with a grid, the surface of the source electrode area is provided with source electrode, and the surface of the drain electrode area is provided with a drain electrode; the grid includes a first grid area and a second grid area which are parallel and relativelyinstalled, the grid also includes a third grid area which is connected with the first grid area and the second grid area, and the third grid area is a curved surface structure; the drain electrode ispositioned between the first grid area and the second grid area; the source electrode includes a first source electrode area and a second source electrode area which are parallel and relatively installed, the first source electrode area and the first grid area are correspondingly installed, and the second source electrode area and the second grid area are correspondingly installed.The problem thatsurface breakdown easily occurs on the curved surface part of the grid in the prior art is solved.

Description

technical field [0001] The present invention relates to the technical field of semiconductor devices, and more specifically, to a power semiconductor device and a manufacturing method thereof. Background technique [0002] Gallium nitride material has the characteristics of large band gap, high saturation drift speed and high temperature resistance, and the heterostructure formed by gallium nitride material has a high two-dimensional electron gas concentration and mobility. Therefore, in the production of high In terms of performance power semiconductor devices, especially in the production of high-speed, low power consumption, and medium and low voltage electronic devices, it has obvious advantages. [0003] refer to figure 1 , figure 1 It is a schematic structural diagram of an existing power semiconductor device, which includes: a thumb-shaped gate G, a source S and a drain D fabricated on a semiconductor substrate. When a voltage is applied to the power semiconductor ...

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Problems solved by technology

[0004] In view of this, the present invention provides a power semiconductor device and its manufacturing method to solve the problem in the prior art that surface breakdown is prone to occur on the curved surface of the gate

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