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Vapor disposition of silicon-containing films using penta-substituted disilanes

A technology of pentachlorodisilane and silicon film, which is used in electrical components, gaseous chemical plating, coatings, etc.

Active Publication Date: 2018-08-31
LAIR LIQUIDE SA POUR LETUDE & LEXPLOITATION DES PROCEDES GEORGES CLAUDE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, finding suitable silicon-containing precursors for the commercial deposition of silicon-containing films remains a challenge

Method used

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  • Vapor disposition of silicon-containing films using penta-substituted disilanes
  • Vapor disposition of silicon-containing films using penta-substituted disilanes
  • Vapor disposition of silicon-containing films using penta-substituted disilanes

Examples

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example

[0337] The following examples illustrate experiments performed in conjunction with the disclosure herein. These examples are not intended to be all-inclusive and are not intended to limit the scope of the disclosures described herein.

example 1

[0338] Example 1: Pentachlorodisilane [PCDS or Si 2 HCl 5 ] Pyrolysis test

[0339] image 3 is a schematic diagram of the deposition apparatus used for the following tests. The apparatus includes a hot wall tube reactor 100 containing a substrate sample 105 . The pump 110 removes the contents from the hot wall tube reactor 100 .

[0340] Vapors of the disclosed Si-containing film-forming composition are introduced from delivery device 200 into hot-wall tubular reactor 100 via line 201 . Inert gas 205 via line 206, such as N 2 delivered to the delivery device 200. Inert gas 205 may also be delivered to reactor 100 via line 207 .

[0341] An oxidizing gas can be introduced from the delivery device 300 into the hot-wall tube reactor 100 via line 301 . When the oxidizing gas is ozone, line 301 may include an ozone generator 303 and an ozone monitor 304 . Oxidizing gas may also be delivered to exhaust 311 .

[0342] Nitrogen-containing gas can be introduced from delivery...

example 2

[0349] Example 2 using PCDS or HCDS and O 3 / O 2 SiO 2 ALD

[0350] Using PCDS with O 3 (as an oxidizing agent) for SiO 2 ALD. Will image 3 The reaction furnace is controlled at 1 torr and makes 50sccm of N 2 continuous flow. The ALD process comprises the following steps: 1) supplying a pulse of 4 sccm of PCDS to the reaction chamber for 10 seconds, 2) passing 50 sccm of N 2 Excess precursor is purged for 90 seconds, 3) About 7.2% O is supplied to the chamber 3 / O 2 (O 2 : 100sccm) for 10 seconds, 4) through 50sccm of N 2 Purge excess O 3 / O 2 Lasts 30 seconds. The sequence from 1) to 4) was repeated for 200 cycles until the deposited layer achieved a suitable thickness for film characterization (i.e. more than ). The method was repeated with HCDS instead of PCDS, using the same ALD process conditions as for PCDS. Figure 6 The average deposition rates from 4 individual sample substrate locations using PCDS (circles) and 4 individual sample locations using H...

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Abstract

Disclosed are methods of depositing silicon-containing films on substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of US Patent Application Serial No. 14 / 979,816, filed December 28, 2015, which is hereby incorporated by reference in its entirety for all purposes. technical field [0003] A method of depositing a silicon-containing film on a substrate via a vapor deposition process using a penta-substituted disilane such as pentachlorodisilane or penta(dimethylamino)disilane is disclosed. Background technique [0004] Silicon-containing films are one of the most important components in semiconductor devices, and the development of various fabrication processes thereof has been highly studied. Silicon oxide (SiO 2 ) films can be used as capacitors and insulating layers. D. Tahir et al., “Electronic and optical properties of Al 2 o 3 / SiO 2 films grown on Si substrate[Al grown on Si substrate 2 o 3 / SiO 2 Electronic and Optical Properties of Films]”, J.Phys.D: Appl. Phys. [Physical Journal D...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/316C23C16/455H01L21/31
CPCH01L21/02529C23C16/325C23C16/36H01L21/02167H01L21/02208H01L21/02211H01L21/02271H01L21/02277H01L21/02274H01L21/32055H01L21/0228H01L21/02164H01L21/0217H01L21/02532H01L21/0262C23C16/45553C23C16/402C23C16/345H01L21/02236H01L21/02247C23C16/24
Inventor 让-马克·吉拉尔高昌熙伊凡·奥谢普科夫柳田一孝大窪清吾野田直人尤利安·伽蒂诺
Owner LAIR LIQUIDE SA POUR LETUDE & LEXPLOITATION DES PROCEDES GEORGES CLAUDE