Preparation method for epitaxial wafer of light-emitting diode
A technology of light-emitting diodes and epitaxial wafers, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of poor crystal quality of epitaxial wafers, achieve the effects of improving crystal quality, reducing implementation costs, and improving luminous efficiency
Active Publication Date: 2018-09-04
HC SEMITEK SUZHOU
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[0006] In order to solve the problem of poor crystal quality of epitaxial wafers in the prior art, an embodiment of the present invention provides a method for preparing a light-emitting diode epitaxial wafer
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[0033] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0034] The embodiment of the present invention provides a method for preparing a light-emitting diode epitaxial wafer, figure 1 For the flow chart of the preparation method provided by the embodiments of the present invention, see figure 1 , the preparation method comprises:
[0035] Step 101: providing a substrate provided with a buffer layer.
[0036] Figure 2a It is a schematic structural diagram of the light emitting diode epitaxial wafer after step 101 is executed. Among them, 1 is the substrate, and 2 is the buffer layer. like Figure 2a As shown, a buffer layer 2 is disposed on a substrate 1 .
[0037] In this embodiment, the buffer layer includes a boron nitride layer.
[0038] Specifically, the boron nitride layer may ...
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Abstract
The invention discloses a preparation method of the epitaxial wafer of a light-emitting diode and belongs to the semiconductor technical field. The preparation method includes the following steps that: a substrate provided with a buffer layer is provided, wherein the buffer layer comprises a boron nitride layer; an un-doped gallium nitride layer is grown on the buffer layer; an adhesive film is disposed on the un-doped gallium nitride layer; the adhesive film is utilized to separate the un-doped gallium nitride layer from the buffer layer and transfer the un-doped gallium nitride layer onto the substrate; and the adhesive film is removed, and the substrate provided with the un-doped gallium nitride layer is left. According to the preparation method of the present invention, the boron nitride layer is adopted as the buffer layer on the substrate; the un-doped gallium nitride layer is grown on the buffer layer, so that the crystal quality of the un-doped gallium nitride layer grown on the boron nitride layer is high; and the adhesive film is utilized to separate the un-doped gallium nitride layer with good crystal quality from the buffer layer and transfer the un-doped gallium nitride layer to the substrate, so that an epitaxial wafer bottom layer having high crystal quality can be obtained; and therefore, the crystal quality of the epitaxial wafer of the light-emitting diode which is obtained through further growth is high.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a light-emitting diode epitaxial wafer. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a kind of semiconductor diode, which can convert electrical energy into light energy. Semiconductor light-emitting diodes represented by gallium nitride have excellent characteristics such as large band gap, high saturation drift speed, high temperature resistance, and high power capacity, and are widely used. [0003] A light emitting diode chip is the core component of a light emitting diode, including an epitaxial wafer and electrodes arranged on the epitaxial wafer. The existing gallium nitride-based light-emitting diode epitaxial wafer is formed by sequentially growing a buffer layer, an undoped gallium nitride layer, an n-type gallium nitride layer, a multi-quantum well layer and a p-type gallium ni...
Claims
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IPC IPC(8): H01L33/00H01L33/12
CPCH01L33/0075H01L33/0093H01L33/12
Inventor 魏晓骏葛永晖舒辉郭炳磊吕蒙普李鹏
Owner HC SEMITEK SUZHOU