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Semiconductor device

A semiconductor and conductor layer technology, applied in the direction of semiconductor devices, semiconductor/solid-state device parts, amplifiers with semiconductor devices/discharge tubes, etc., can solve the problem of increasing the chip area and achieve the effect of increasing the operating frequency

Active Publication Date: 2018-09-07
MURATA MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since it is necessary to secure an area for placing more than 8 diodes, the chip area will increase

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment

[0123] refer to Figures 1A to 5 , the semiconductor device according to the first embodiment will be described.

[0124] Figure 1A It is a block diagram of a power amplifier module incorporating the semiconductor device based on this embodiment. The input signal input from the high-frequency input terminal RFi is input to the input stage amplifier circuit 31 via the matching circuit 33 . The signal amplified by the input stage amplifier circuit 31 is input to the output stage amplifier circuit 32 via the matching circuit 34 . The output signal amplified by the output stage amplifier circuit 32 is output from the high frequency output terminal RFo.

[0125] A bias voltage is applied to the bias circuits 35 and 36 from the bias voltage terminal Vbat. Based on the signal input from the bias control terminal Vb1 , the bias circuit 35 supplies a bias current to the input stage amplifier circuit 31 . The bias circuit 36 ​​supplies a bias current to the output stage amplifier c...

no. 2 Embodiment

[0179] Next, refer to Image 6 and Figure 7 A semiconductor device based on the second embodiment will be described. Hereinafter, descriptions of the configurations common to those of the semiconductor device according to the first embodiment will be omitted.

[0180] Image 6 is the output stage amplifier circuit 32 ( Figure 1A ) and the equivalent circuit diagram of the protection circuit 40 . In the first embodiment, the protection circuit 40 is constituted by two diode series circuits 47, but in the second embodiment, the protection circuit 40 is constituted by one diode series circuit.

[0181] Figure 7 This is a plan view of the semiconductor device according to the second embodiment. In the first embodiment, as figure 2 As shown, a diode series circuit 47 is connected to the emitter wiring E1 of the first HBT cell block 49A and the emitter wiring E1 of the second HBT cell block 49B, respectively. In contrast, in the second embodiment, the protection circuit 4...

no. 3 Embodiment

[0187] Next, refer to Figure 8 A semiconductor device based on the third embodiment will be described. Hereinafter, descriptions of the configurations common to those of the semiconductor device according to the second embodiment will be omitted.

[0188] Figure 8 This is a plan view of the semiconductor device according to the third embodiment. In the second embodiment, the protection circuit 40 ( Figure 7 ) of the protection diodes 48 are arranged along one straight line. In the third embodiment, the diode array composed of the plurality of protection diodes 48 constituting the protection circuit 40 is folded back halfway. The foldback location does not have to be the middle of the diode column.

[0189] In the third embodiment, the protection circuit 40 also overlaps with the pad conductor layer P2. Therefore, the same effects as those of the second embodiment can be obtained. Furthermore, since the diode row can be folded back at an arbitrary position, the degree...

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PUM

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Abstract

Provided is a semiconductor device which can also suppress increase of the area of a chip even if a protection circuit is assembled to an amplifier circuit. The amplifier circuit including a semiconductor element is formed on a substrate. The protection circuit formed on the substrate includes a plurality of protection diodes that are connected in series with each other, and the protection circuitis connected to an output terminal of the amplifier circuit. A pad conductive layer at least partially includes a pad for connecting to a circuit outside the substrate. The pad conductive layer and the protection circuit at least partially overlap each other in plan view.

Description

technical field [0001] The present invention relates to semiconductor devices. Background technique [0002] A heterojunction bipolar transistor (HBT) is mainly used as a transistor constituting a high-frequency amplifier module of a recent mobile terminal. A semiconductor device in which an electrostatic breakdown prevention circuit (protection circuit) is connected between the collector and the emitter of the HBT is known (Patent Document 1). The protection circuit is composed of a plurality of diodes connected in series with each other. [0003] prior art literature [0004] Patent Literature [0005] Patent Document 1: Patent No. 4977313 [0006] The diode constituting the protection circuit is designed so as not to conduct during normal function operation, but to conduct when a voltage exceeding the upper limit of the allowable voltage is generated between the collector and the emitter. In order to satisfy this condition, a circuit in which eight or more diodes are...

Claims

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Application Information

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IPC IPC(8): H01L23/488H01L25/00
CPCH01L23/488H01L25/00H01L24/05H01L2224/48463H01L2924/00014H03F1/52H03F3/195H03F2200/444H01L29/8613H01L29/7371H01L29/0692H01L27/0255H03F3/213H01L29/41708H01L2224/02166H01L2224/13082H01L2224/13144H01L2224/13101H01L2224/0401H01L2224/04042H01L24/48H01L24/13H01L2224/45099H01L2924/014H01L24/17H01L24/06H01L29/42304H01L29/0821H01L29/1004H01L24/49
Inventor 佐佐木健次筒井孝幸大部功山本靖久
Owner MURATA MFG CO LTD
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