The invention provides an inner cavity VCSEL epitaxial structure, and belongs to the technical field of
semiconductor lasers, the inner cavity VCSEL epitaxial structure comprises an epitaxial
wafer, the epitaxial
wafer comprises a GaAs substrate, an n-region undoped DBR, an n-type DBR, a
quantum well active region, an
oxide layer, a p-type DBR and a p-region undoped DBR, a thicker In0. 49Ga0. 51P layer matched with a GaAs substrate lattice is inserted between distributed Bragg reflectors on the two sides of the active region, and the
quantum well active region is provided with an N-region undoped DBR, an N-region undoped DBR, an N-region undoped DBR, an N-region undoped DBR and an N-region undoped DBR. The layer is exposed by
etching and then an
ohmic contact electrode is fabricated thereon to form inner cavity contact. The number of pairs of serially connected DBRs is reduced through inner cavity contact, and the series resistance of the
chip can be greatly reduced. In addition, the
band gap width of the In0. 49Ga0. 51P layer is 1.88 eV which is much larger than 1.42 V of GaAs, and the In0. 49Ga0. 51P layer does not contain an aluminum component which is easy to oxidize, so that the defect that an AlGaAs inner cavity
contact layer is easy to oxidize when exposed and the negative effect that GaAs is easy to absorb in short-
wave band light are improved. By adopting the structure, the series resistance and heating of the device can be more flexibly controlled, and the
photoelectric conversion efficiency and reliability of the
chip are better.