Efficient and oxygen-permeable ITO target material placing and sintering method

Abstract

The invention discloses an efficient and oxygen-permeable ITO target material placing and sintering method. The method comprises the following steps of 1, forming ITO powder to obtain an ITO target blank, and then drying the ITO target blank; 2, placing a gasket on a load bearing plate, then placing a layer of porcelain balls of which the diameters are 0.5-1 mm on the gasket, and then placing theITO target blank on the porcelain balls; 3, putting the load bearing plate provided with the ITO target blank in step 2 into a sintering surface to be sintered, and then grinding to obtain the ITO target material. According to the efficient and oxygen-permeable ITO target material placing and sintering method, the oxygen-permeable rate during sintering of the ITO target blank can be greatly increased, the density of the sintered ITO target material is increased, and the quality of the ITO target material is improved; meanwhile, after sintering, gasket marks cannot be generated on the bottom face of the ITO target material, the target material cannot be polluted, and the consumption of the target material due to grinding in the after-processing process is reduced.

Description

technical field [0001] The invention relates to a high-efficiency oxygen-permeable ITO target placement-sintering method. Background technique [0002] The ITO target is a black-gray ceramic semiconductor made of indium oxide powder and tin oxide powder after molding and sintering. It is an important raw material for the production of ITO thin films. After years of development, the preparation process of ITO targets is relatively mature, and there are various methods, but there are still problems such as insufficient sintering, long processing time, complicated production process, and low production efficiency. The density of ITO targets is still very high. Big room for improvement. [0003] When the traditional technology is sintering the ITO target, the placement of the ITO target is mainly divided into the following two methods: 1) Direct placement method: place the target blank directly on the setter plate, and then put it into the sintering furnace together Sintering,...

AI Technical Summary

Problems solved by technology

After years of development, the preparation process of ITO targets is relatively mature, and there are various methods, but there are still problems such as insufficient sintering, long processing time, complicated production process, and low production efficiency. The density of ITO targets is still very high. big room for improvement

[0003] When the traditional technology is sintering the ITO target, the placement of the ITO target is mainly divided into the following two methods: 1) Direct placement method: place the target blank directly on the setter plate, and then put it into the sintering furnace together Sintering, because the contact part of the target blank and the setter plate is almost impermeable to oxygen, which will lead to insufficient sintering of the target blank and poor target forming effect, this method has been gradually eliminated; 2) Gasket method: first place the target blank Put the gasket on the bottom, place it on the setter, and put it into the sintering furnace for sintering. This method can improve the oxygen permeability of the target during sintering to a certain extent, but the target will be in contact with the gasket after sintering. A large area of ​​gasket marks will be left on the part of the target, the bottom layer of the target will be polluted, and the subsequent grinding operation will require a large amount of grinding, which not only increases the difficulty and cost of the process, but also has a certain impact on the quality of the target

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