Noise suppression method in differential silicon through hole array and differential signal transmission structure thereof
A technology of differential signal and transmission structure, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., to achieve the effect of reducing crosstalk
Active Publication Date: 2018-09-21
HANGZHOU DIANZI UNIV
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Problems solved by technology
Using the differential signal transmission method can effectively improve the signal transmission quality, but crosstalk between differential signals also exists
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[0032] The present invention will be further described below in conjunction with accompanying drawing.
[0033] As shown in Figure 1, the metal pillar (105) is located in the middle of the bottom semiconductor substrate layer as a signal return path, and the first differential pair is composed of metal pillars (101-102), located on the left side of the bottom semiconductor substrate layer, and its top is used as a differential signal. input. The second differential pair consists of metal pillars (103-104) located to the right of the underlying semiconductor substrate layer. The space between the metal pillars (101-105) and the TSVs is filled with insulating layers (106-110).
[0034] As shown in Figure 2, the first metal upper plate (209), the first metal lower plate (210) and the first MIM capacitor medium (214) form the first MIM capacitor, the second metal upper plate (211), The second metal lower plate (212) and the second MIM capacitor medium (215) form a second MIM cap...
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The present invention discloses a noise suppression method in a differential silicon through hole array and a differential signal transmission structure thereof. A method of introducing a compensationcapacitor between differential pair structures is used to reduce crosstalk between differential signals. The differential signal transmission structure comprises a top dielectric layer and a bottom semiconductor substrate layer. The top dielectric layer is internally provided with two MIM capacitors, the first capacitor is formed by a first metal upper pole plate, a first MIM capacitor media anda first metal lower pole plate, and the second MIM capacitor is formed by a second metal upper pole plate, a second MIM capacitor media and a second metal lower pole plate. The bottom semiconductor substrate layer is internally provided with five vertically through silicon through holes. A first differential pair structure is formed by a first metal pillar and a second metal pillar, a second differential pair structure is formed by a third metal pillar and a fourth metal pillar, and the structures are used for transmitting the differential signals. A fifth metal column serves as a return path.
Description
technical field [0001] The invention belongs to the field of three-dimensional integrated circuits, and in particular relates to a noise suppression method in a differential through-silicon hole array and a differential signal transmission structure thereof. Background technique [0002] As a key technology of 3D integrated circuits, through-silicon via technology has been extensively studied in recent decades. Through silicon via technology, three-dimensional integrated circuits have made great progress, with higher integration, shorter interconnection length, better noise suppression ability, and lower transmission loss. However, with the increase of signal frequency, the signal integrity problem brought by TSV technology has become increasingly prominent, mainly reflected in the crosstalk problem between TSVs. [0003] In order to ensure the integrity of the signal, a differential signal is proposed for transmission. Using the differential signal transmission mode can e...
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IPC IPC(8): H01L23/538H01L21/768
Inventor 赵文生泮金炜王高峰
Owner HANGZHOU DIANZI UNIV