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Nanoscale secondary magneto-optical Kerr effect measurement method

A magneto-optical Kerr effect and nanoscale technology, applied in the field of physical measurement, can solve problems such as complex steps, effects easily limited by optical components, and inability to obtain dynamic characteristics of nanoscale magnetization

Inactive Publication Date: 2018-10-19
JINHUA VOCATIONAL TECH COLLEGE
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Problems solved by technology

The magneto-optical Kerr effect measurement device mainly detects the magnetization observation of the sample surface by detecting the change of the polarization state of a beam of linearly polarized light after it is reflected on the surface of the material. Therefore, the imaging effect is easily limited by the optical elements. Technical defect 1: The spatial resolution of the traditional focusing Kerr microscope using the microscope objective lens is determined by the optical diffraction limit, so it is impossible to obtain the dynamic characteristics of magnetization at the nanometer scale
In recent years, the secondary magneto-optical Kerr effect has been observed in some magnetic samples. The detection of the secondary magneto-optical Kerr effect is different from the traditional magneto-optic Kerr effect measurement. The second defect of the existing technology: the The secondary magneto-optic Kerr effect data needs to be compared with the traditional magneto-optic Kerr effect data for calibration. Therefore, in the prior art, it is necessary to change the structure of the test device in the same experimental process to complete the experiment. The steps are relatively complicated, so A nanoscale secondary magneto-optical Kerr effect measurement method can solve the problem

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[0024] like figure 1It is a schematic diagram of the present invention, the lower left corner has an xyz three-dimensional direction mark, xyz is a space rectangular coordinate system, the xy plane is a horizontal plane, and the zx plane is perpendicular to the horizontal plane. The measuring device mainly includes a computer 1, a laser I2, a polarizer I3, a laser II4, a polarizer II5, convex lens I6, beam splitter 7, convex lens II8, lens stage 9, atomic force microscope 10, probe 11, sample 12, sample stage 13, magnet 14, signal generator 15, oscilloscope 16, convex lens III17, Wollaston Prism I18, detector I19, detector II20, Wollaston prism II21, detector III22, detector IV23, the probe 11 is located at the lower end of the atomic force microscope 10, the sample 12 is located on the sample stage 13, the sample 12, the sample stage 13. The magnets 14 are located under the probe 11 in turn. The probe 11 is an atomic force microscope probe and is in the shape of a circular fr...

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Abstract

The invention relates to the technical field of physical measurement, in particular to a nanoscale secondary magneto-optical Kerr effect measuring method. A measuring device comprises a computer, a laser I, a polarizing plate I, a laser II, a polarizing plate II, a convex lens I, a beam splitter, a convex lens II, a lens table, an atomic force microscope, a probe, a sample, a sample stage, a magnet, a signal generator, an oscilloscope, a convex lens III, a Wollaston prism I, a detector I, a detector II, a Wollaston prism II, a detector III, and a detector IV. A high-precision positioning device is used to simultaneously illuminate the two lasers to a sample surface at different incident angles so as to study the nanoscale magnetization properties. Two sets of detectors are used to record the reflected light intensity, a difference between reflected light intensities emiited by the sample is analyzed so as to calibrate a structure and electronic properties of the nano-scale sample withsecondary magneto-optical Kerr effect. A secondary magneto-optical Kerr effect signal and a longitudinal magneto-optical Kerr effect signal of the sample can be measured simultaneously without changing the structure of the device.

Description

technical field [0001] The invention relates to the technical field of physical measurement, in particular to a nano-scale secondary magneto-optical Kerr effect measurement method for studying the secondary magneto-optical Kerr effect of a single nanostructure on the surface of a material. Background technique [0002] The magneto-optical Kerr effect measurement device is an important method in the study of material surface magnetism. Its working principle is based on the magneto-optical Kerr effect caused by the interaction between light and magnetized media. It has important applications in the study of magnetic order, magnetic anisotropy, interlayer coupling and phase transition behavior of magnetic ultra-thin films. The magneto-optical Kerr effect measurement device mainly observes the magnetization of the sample surface by detecting the light intensity change caused by the polarization state change of a beam of linearly polarized light reflected on the material surface....

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R33/032G01R33/12G01N21/84G01N27/72
CPCG01N21/84G01N27/72G01R33/0325G01R33/12G01R33/1215
Inventor 方晓华张向平王永忠
Owner JINHUA VOCATIONAL TECH COLLEGE
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