Method of fabricating three-dimensional memory and preparation method of semiconductor structure

A memory, three-dimensional technology, applied in the field of memory, can solve the problems of poor overall shape of channel holes, high stress, interface metal pollution, etc., and achieve the effect of alleviating pollution and stress problems and making it easier to manufacture and remove.

Active Publication Date: 2018-10-19
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology

[0003] In the manufacturing process of three-dimensional memory, it is necessary to make a deep channel hole. However, etching a deep channel hole will not only easily lead to poor overall shape of the

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  • Method of fabricating three-dimensional memory and preparation method of semiconductor structure
  • Method of fabricating three-dimensional memory and preparation method of semiconductor structure
  • Method of fabricating three-dimensional memory and preparation method of semiconductor structure

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preparation example Construction

[0075] first reference figure 1 and Figure 2A to Figure 2F , an embodiment of the preparation method of the three-dimensional memory provided by the present invention is described. In the current embodiment, the method for preparing a three-dimensional memory provided by the present invention at least includes the following steps:

[0076] Step 100, refer to Figure 2A , forming a first stack 10 formed by alternately stacking the first layer 2 and the second layer 3 on the substrate 1 . In the present embodiment, the substrate 1 is made of single crystal silicon. But in other embodiments, the substrate 1 can also be made of other suitable materials, for example, in some embodiments, the material of the substrate 1 is silicon (single crystal silicon, polycrystalline silicon), germanium, silicon-on-insulator thin film ( Silicon on insulator, SOI), etc.

[0077] On the other hand, the first layer 2 and the second layer 3 may both be insulating layers, or may be an insulatin...

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Abstract

A method of fabricating a three-dimensional memory comprises steps of: forming a first stack formed by alternately stacking a first layer and a second layer on a substrate; forming a first channel hole penetrating through the first stack and reaching the substrate; forming a sacrificial portion in the first channel hole, and forming a cavity between the sacrificial portion and a sidewall and a bottom portion of the first channel hole; forming a second stack by alternately stacking a third layer and a fourth layer on the first stack; forming a second channel hole penetrating through the secondstack and reaching the sacrificial portion; and removing the sacrificial portion. The method for fabricating the three-dimensional memory provided by the present invention arranges the sacrificial portion, and forms the cavity formed between the sacrificial portion and the sidewall and the bottom portion of the channel hole, so that the material of the sacrificial portion can be made less, the sacrificial portion is easier to produce and remove, and the contamination and stress problems caused by the material of the sacrificial portion are solved.

Description

technical field [0001] The invention mainly relates to the technical field of memory, and in particular to a method for preparing a three-dimensional memory and a method for preparing a semiconductor structure. Background technique [0002] With the continued emphasis on highly integrated electronic devices, there is a continuing need for semiconductor memory devices that operate at higher speeds and lower power and have increased device densities. To this end, devices with smaller dimensions and multilayer devices with transistor cells arranged in horizontal and vertical arrays have been developed. Three-dimensional memory such as 3D NAND is an emerging type of flash memory developed by the industry. It solves the limitations of 2D or planar NAND flash memory by vertically stacking multi-layer data storage units. It has excellent precision and supports content in a smaller space. With a higher storage capacity, it can create a storage device with a storage capacity several...

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Application Information

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IPC IPC(8): H01L27/06H01L21/70
CPCH01L21/70H01L27/0688
Inventor 刘峻
Owner YANGTZE MEMORY TECH CO LTD
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