Wideband class F power amplifier and design method

Abstract

The invention discloses a wideband class F power amplifier and a design method. A traditional class F power amplifier utilizes microstrips to achieve harmonic control, and the high Q value characteristic of the microstrip often greatly limits the operation bandwidth of the power amplifier. The wideband class F power amplifier comprise a band-pass input matching circuit, a grid electrode bias circuit, a transistor, a drain electrode bias circuit, a pi type harmonic control network and a low-pass output matching circuit; the input end of the transistor is connected with the voltage output end ofthe grid electrode bias circuit, and the output end of the transistor is connected with the voltage output end of the drain electrode bias circuit; the band-pass input matching circuit comprises a first input microstrip, a second input microstrip, a third input microstrip and a fourth input microstrip; and the pi type harmonic control network comprises a first harmonic microstrip, a second harmonic microstrip, a third harmonic microstrip and a fourth harmonic microstrip. Accordingly, the bandwidth of the class F power amplifier can be increased while the high efficiency is kept.

Description

technical field [0001] The invention belongs to the technical field of power amplifiers, and in particular relates to a broadband class F power amplifier and a design method. Background technique [0002] For more than half a century, radio frequency microwave technology has been developed rapidly and has been widely used in communication fields such as mobile phones, satellite communications, and WLAN. The RF power amplifier module is an important part of the wireless communication system. In order to meet the long-distance transmission of the signal and ensure the reliable reception of the signal, the power amplifier module must be used to amplify the signal in the wireless transceiver system. Therefore, the performance of the power amplifier module directly determines the working conditions of the entire transceiver system. There is no doubt that the power amplifier module is the core part of the RF front end. [0003] With the continuous development of communication te...

AI Technical Summary

Problems solved by technology

However, the class F power amplifiers in the prior art have the following problems: because the traditional class F power amplifiers use microstrip lines for harmonic control, and the high Q characteristic of microstrip lines often greatly limits the operating bandwidth of power amplifiers

However, there is a problem with the single microstrip tuning line: within the design bandwidth, when the frequency is close to the highest frequency point and the lowest frequency point, there is a problem of obvious drop in efficiency, which leads to the problem of low flatness in the band

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