Laminate, electronic device, and production method for laminate

A technology of laminates and electronic devices, applied in electronic equipment, chemical instruments and methods, electric solid devices, etc., can solve the problem that compounds have not yet been practical

Inactive Publication Date: 2018-10-26
JNC CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, among these compounds, compounds showing sufficient heat resistance and durability have not yet been put into practical use, so further development of highly heat-resistant materials is being pursued.

Method used

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  • Laminate, electronic device, and production method for laminate
  • Laminate, electronic device, and production method for laminate
  • Laminate, electronic device, and production method for laminate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0328]

[0329] Weigh the second inorganic filler (BN) and liquid crystalline epoxy compound (compound represented by formula (6-1)) respectively 2g and 4g (the blending ratio of BN is 19% by volume) and put it on the medicine package paper, use a mortar After mixing, kneading was carried out at 120° C. for 10 minutes using a twin roll (HR-3 manufactured by Nitto Reactor Co., Ltd.). Thereafter, separation and purification were carried out by ultrasonic treatment and centrifugation to obtain liquid crystalline epoxy-decorated BN particles from which unreacted components were removed. The particles are referred to as the first inorganic filler.

[0330] The coating amount of the silane coupling agent or the liquid crystalline epoxy compound of the first inorganic filler and the second inorganic filler on the BN particles was measured using a thermogravimetry-differential thermal analysis (Thermogravimetry-Differential Thermal Analysis, TG-DTA) device (Seiko Electronics (Seiko ...

Embodiment 2

[0340] A sheet containing 47 vol % of BN and 41 vol % of AlN was produced in the same manner as sheet 2 , and was referred to as sheet 3 . Furthermore, sheet 2 and sheet 3 are laminated and cured. The obtained sheet was used as the laminated body 2 of the thermal expansion control member.

Embodiment 3

[0342] In the same manner as sheet 2, BN was 65% by volume, and Al 2 o 3 It is an 18 volume % tablet, and it is set as sheet 4. Furthermore, sheet 1 and sheet 4 are laminated and cured. The obtained sheet was used as the laminated body 3 of the thermal expansion control member.

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Abstract

The present invention is a laminate: with which differences in the thermal expansion coefficient at interfaces between different materials in the interior of a semiconductor element or the like can bekept small; which has high heat resistance; and which has high thermal conductivity. The laminate is provided with at least two layers of thermal expansion-controlling members, the thermal expansion-controlling members including a thermally conductive first inorganic filler joined to one end of a first coupling agent, and a thermally conductive second inorganic filler joined to one end of a second coupling agent; the other end of the first coupling agent and the other end of the second coupling agent are respectively joined to a polymerizable compound, or joined to one another; and the thermal expansion-controlling members have thermal expansion coefficients that are respectively different.

Description

technical field [0001] The present invention relates to a thermal expansion-controllable laminate used in electronic devices such as electronic substrates. In particular, it relates to a laminate that combines processability possessed by resins with high heat resistance at 250° C. or higher, and can conduct and transfer heat generated inside electronic equipment efficiently to release heat. Background technique [0002] In recent years, the operating temperature of semiconductor elements for power control of electric vehicles, hybrid vehicles, and electric vehicles has increased due to the use of wide-gap semiconductors and the like. In particular, silicon carbide (SiC) semiconductors and the like attracting attention have an operating temperature of 200° C. or higher, and therefore high heat resistance of 250° C. or higher is required for the encapsulation material. Furthermore, thermal strain due to a difference in coefficient of thermal expansion between materials used i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B7/02B32B9/00B32B27/20C08K9/04C08L63/02H01L23/36H01L23/373B32B7/027
CPCC08K9/04H01L23/36H01L23/373B32B5/16B32B5/22B32B7/027B32B2457/14B32B2457/00B32B2307/302B32B2307/306B32B2264/10B32B2264/102B32B2264/104B32B2264/108B32B2264/12B32B2264/107H01L23/3735B32B27/20B32B2305/55B32B2305/72C09K19/02C09K19/04C09K19/0403C09K19/20C09K2019/0448C09K2019/521B32B2307/30
Inventor 藤原武稲垣顺一上利泰幸平野寛门多丈治冈田哲周
Owner JNC CORP
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