Laminate, electronic device, and production method for laminate

A technology of laminates and electronic devices, applied in electronic equipment, chemical instruments and methods, electric solid devices, etc., can solve the problem that compounds have not yet been practical
CN108712965AInactive Publication Date: 2018-10-26JNC CORP +1

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
JNC CORP
Publication Date
2018-10-26
Estimated Expiration
Not applicable · inactive patent

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Abstract

The present invention is a laminate: with which differences in the thermal expansion coefficient at interfaces between different materials in the interior of a semiconductor element or the like can bekept small; which has high heat resistance; and which has high thermal conductivity. The laminate is provided with at least two layers of thermal expansion-controlling members, the thermal expansion-controlling members including a thermally conductive first inorganic filler joined to one end of a first coupling agent, and a thermally conductive second inorganic filler joined to one end of a second coupling agent; the other end of the first coupling agent and the other end of the second coupling agent are respectively joined to a polymerizable compound, or joined to one another; and the thermal expansion-controlling members have thermal expansion coefficients that are respectively different.
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Description

technical field

[0001] The present invention relates to a thermal expansion-controllable laminate used in electronic devices such as electronic substrates. In particular, it relates to a laminate that combines processability possessed by resins with high heat resistance at 250° C. or higher, and can conduct and transfer heat generated inside electronic equipment efficiently to release heat. Background technique

[0002] In recent years, the operating temperature of semiconductor elements for power control of electric vehicles, hybrid vehicles, and electric vehicles has increased due to the use of wide-gap semiconductors and the like. In particular, silicon carbide (SiC) semiconductors and the like attracting attention have an operating temperature of 200° C. or higher, and therefore high heat resistance of 250° C. or higher is required for the encapsulation material. Furthermore, thermal strain due to a difference in coefficient of thermal expansion between materials used i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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