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Ion implantation surface modification and nanoscale polishing methods for single crystal SiC

A technology of ion implantation and surface modification, applied in the field of ultra-precision machining of brittle materials, can solve problems such as material deformation, achieve the effect of reducing hardness and brittleness, taking into account work efficiency and improving quality

Active Publication Date: 2020-12-18
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for ion implantation surface modification and nanoscale polishing of single crystal SiC, which solves the problem of extrusion and shearing due to the removal of the physical and mechanical properties of the surface layer of brittle materials during the polishing process of single crystal SiC The problem of severe deformation of the material

Method used

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  • Ion implantation surface modification and nanoscale polishing methods for single crystal SiC
  • Ion implantation surface modification and nanoscale polishing methods for single crystal SiC
  • Ion implantation surface modification and nanoscale polishing methods for single crystal SiC

Examples

Experimental program
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Effect test

Embodiment 1

[0034] Step 1, measure the roughness of the surface of the wafer to be polished after grinding, the measured surface roughness of the wafer is 30nm, and determine the depth of ion implantation according to the roughness of the wafer surface after grinding;

[0035] Step 2, ion implantation on the surface of the SiC wafer,

[0036] After determining the selected ion implanter for operation, Al ions are selected for implantation. According to the proportional relationship between the wafer surface roughness measured in step 1 and the ion implantation depth and ion implantation energy value, the ion implantation depth corresponding to the wafer surface roughness is selected to be 30nm. And sequentially select 3 groups of energies implanted into wafers with implantation depths of 30nm, 20nm and 10nm respectively;

[0037] Step 3, mechanically remove the wafer surface,

[0038] Place the ion-implanted wafer in a polishing machine to remove the ion-implanted surface layer of the wa...

Embodiment 2

[0040] Step 1, measure the roughness of the wafer surface to be polished after grinding, the measured wafer surface roughness is 50nm, and determine the depth of ion implantation according to the surface roughness of the wafer after grinding;

[0041] Step 2, ion implantation on the surface of the SiC wafer,

[0042] After determining the selected ion implanter for operation, Al ions are selected for implantation. According to the proportional relationship between the wafer surface roughness measured in step 1 and the ion implantation depth and the ion implantation energy value, the ion implantation depth corresponding to the wafer surface roughness is selected to be 50nm. And sequentially select 4 groups of energies implanted into wafers in sequence so that the implantation depths are 50nm, 40nm, 30nm, and 20nm respectively;

[0043] Step 3, mechanically remove the wafer surface,

[0044] Place the ion-implanted wafer in a polishing machine to remove the ion-implanted surfac...

Embodiment 3

[0046] Step 1, measure the roughness of the wafer surface to be polished after grinding, the measured wafer surface roughness is 70nm, and determine the depth of ion implantation according to the surface roughness of the wafer after grinding;

[0047] Step 2, ion implantation on the surface of the SiC wafer,

[0048] After determining the selected ion implanter for operation, Al ions are selected for implantation. According to the proportional relationship between the wafer surface roughness measured in step 1 and the ion implantation depth and ion implantation energy value, the ion implantation depth corresponding to the wafer surface roughness is selected to be 70nm. And sequentially select 4 groups of energies implanted into wafers in sequence so that the implantation depths are 70nm, 50nm, 30nm, and 10nm respectively;

[0049] Step 3, mechanically remove the wafer surface,

[0050] Place the ion-implanted wafer in a polishing machine to remove the ion-implanted surface la...

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Abstract

The invention discloses an ion implantation surface modification and nano-scale polishing method of single-crystal SiC. Specifically, the method is performed according to the following steps: step 1,measuring the roughness of the surface of a ground wafer to be polished and determining ion implantation depth according to the surface roughness of the ground wafer; step 2, after an ion implanter chosen for operation is determined, choosing Al ions for implantation, and choosing an ion implantation energy value corresponding to the surface roughness of the wafer for implantation for several times according to the surface roughness of the wafer measured according to step 1 and a proportional relationship between the ion implantation depth and the ion implantation energy value, so that ions are uniformly distributed along both the implantation depth and the longitudinal direction; and step 3, placing the ion-implanted wafer into a polisher to remove a surface layer, subjected to ion implantation, of the wafer. By adopting the method provided by the invention, the physical and mechanical properties of a surface layer of a brittle material can be improved actively, the hardness and brittleness of the material are reduced and thus a very small mechanical acting force is adopted for removal.

Description

technical field [0001] The invention belongs to the technical field of ultra-precision processing of brittle materials, and in particular relates to a single crystal SiC ion implantation surface modification and nanoscale polishing method. Background technique [0002] With the development of technology, SiC, as a third-generation semiconductor material, is more and more widely used in power devices and IC industries. After the breakthrough of its large-diameter growth process, the wafer manufacturing process has become the focus of attention. Due to high hardness and brittleness, the cutting, grinding, and polishing of SiC single wafers become the bottleneck of the device manufacturing process. The main purpose of polishing is to reduce surface roughness. [0003] At present, the main polishing methods of single crystal SiC are: (1) chemical methods: such as chemical mechanical polishing (CMP), which makes the surface layer material react with the elements in the polishin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B1/00
CPCB24B1/00
Inventor 李淑娟梁列赵智渊袁启龙李言蒋百铃
Owner XIAN UNIV OF TECH
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