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A QLED capable of improving light extraction efficiency and its preparation method

A technology of light extraction efficiency and quantum dot luminescence, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of low light extraction efficiency of QLED, improve optical extraction rate, improve luminous efficiency, and meet industrialization requirements. Effect

Active Publication Date: 2020-11-17
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the deficiencies in the prior art above, the purpose of the present invention is to provide a QLED and a preparation method that can improve the light extraction efficiency, aiming to solve the problem of low light extraction efficiency of the existing QLED

Method used

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  • A QLED capable of improving light extraction efficiency and its preparation method
  • A QLED capable of improving light extraction efficiency and its preparation method
  • A QLED capable of improving light extraction efficiency and its preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0047] In this embodiment, the material of the nanoparticle layer is ETL-1, and ETL-1 is specifically ZnO, and the corresponding relationship between the rotational speed and time during spin coating is as follows Figure 4shown. After the substrate, bottom electrode, hole injection layer, hole transport layer, and quantum dot light-emitting layer are prepared in sequence, the solution of ETL-1 is added to the substrate at low speed rotation at point A to spread it evenly on the substrate. As the time increases and the rotation speed increases, the solution begins to volatilize. At 40 seconds, a solvent (alcohols, such as methanol, ethanol, propanol, etc.) is added. Due to the action of the solvent and the high-speed rotation, the solvent drives the quantum The arrangement of point particles changes, so that the nanoparticles form a certain distribution and size agglomeration, thereby destroying the flatness of the surface and increasing the light extraction efficiency. The s...

Embodiment 2

[0049] After the ETL-1 material is spin-coated, another layer of nanoparticle material ETL-2 is spin-coated. The ETL-2 material is specifically Y-doped ZnO, and the doping ratio is 2.5% (that is, the mass of Y in the ETL-2 material than 2.5%). The corresponding relationship between the rotational speed and time during spin coating ETL-2 is as follows Figure 7 shown. Rotating at low speed at point A is to add the solution of ETL-2, so that it spreads evenly on the substrate. As the time increases and the rotation speed increases, the solution begins to volatilize. At 20 seconds, add the solvent of ETL-1 (alcohols, such as methanol, ethanol, propanol, etc.), and due to the effect of the solvent, rotate at a high speed. Partial penetration of the two layers of ETL-1 and ETL-2 materials leads to an increase in the roughness of the film, thereby destroying the flatness of the surface and increasing the light extraction efficiency.

Embodiment 3

[0051] ETL-3 is a mixture of two nanomaterials N and M (the mass ratio of N and M can range from 1:99 to 99:1), the solubility of solvent L for N is much greater than that for M, where M is ZnO, N is TiO x , L is benzene (such as toluene) or alcohols (such as methanol, ethanol, propanol, etc.). The relationship between the rotation speed and time during ETL-3 spin coating is as follows: Figure 8 shown. Rotating at low speed at point A is to add ETL-3 solution to spread it evenly on the substrate. With the increase of time and the increase of rotation speed, the solution began to volatilize. At 80 seconds, L solvent was added, 100 microliters at a time, with an interval of 10 seconds, and three consecutive additions. Due to the action of the solvent, the N material on the surface of the film is partially dissolved during high-speed rotation, resulting in an increase in the roughness of the film, thereby destroying the flatness of the surface and increasing the light extract...

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Abstract

The invention discloses a QLED capable of improving light extraction efficiency and a preparation method thereof. The QLED sequentially comprises a substrate, a bottom electrode, a quantum dot luminescent layer, a nanoparticle layer in which nanoparticles are agglomerated with each other, and a top electrode. The nanoparticle layer is non-planar structure. The present invention introduces a nanoparticle layer in which nanoparticles are agglomerated with each other on the top of the QLED, and the nanoparticle layer has a non-planar structure, and the optical extraction rate of the QLED can be improved by using the nanoparticle layer, thereby effectively improving the luminous efficiency of the QLED. At the same time, the structure of the present invention does not affect the electrical performance of the QLED device and meets the requirements of industrialization.

Description

technical field [0001] The invention relates to the display field, in particular to a QLED capable of improving light extraction efficiency and a preparation method thereof. Background technique [0002] Compared with organic fluorescent emitters, QLEDs based on quantum dots have the advantages of high color purity, long life, and easy dispersion, and can be prepared by printing processes. They are generally considered to be strong competitors for next-generation display technologies. [0003] In the prior art, QLED is a planar thin film structure, and since the refractive index of each layer of thin film is different, optical reflection will occur at the thin film interface. The light emitted from the quantum dots is thus confined within the QLED. Theoretical calculations suggest that only about 20% of the light will be emitted from the QLED, and the remaining 80% of the light will be confined to different parts of the QLED, which leads to low light extraction efficiency o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/56
CPCH10K50/115H10K50/85H10K71/00H10K71/12
Inventor 向超宇张东华李乐辛征航张滔
Owner TCL CORPORATION