High-resolution power electronics measurements

A resistor and voltage divider technology, applied in the field of measuring the operating characteristics of transistors, can solve the problems of inability to provide and accurately measure the voltage of drain-source transistors, and the inability of signal oscilloscopes to distinguish them.

Active Publication Date: 2018-11-02
TEXAS INSTR INC
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  • Application Information

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Problems solved by technology

Therefore, direct measurements with common oscilloscope voltage probes may saturate the oscilloscope channel when the high voltage transistor is off
In addition, traditional high-voltage oscilloscope probes cannot accurately measure the measured drain-source transistor voltage due to their high division (voltage) ratio (typically 100x) resulting in signals that are too small for the oscilloscope to resolve wh

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  • High-resolution power electronics measurements
  • High-resolution power electronics measurements
  • High-resolution power electronics measurements

Examples

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Embodiment Construction

[0013] In the drawings, like reference numerals identify like elements throughout, and the various features are not necessarily drawn to scale. Also, the terms "couple" or "couples" include indirect or direct electrical connections or combinations thereof. For example, if a first device is coupled to or with a second device, that connection may be through a direct electrical connection, or through an indirect electrical connection via one or more intervening devices and connections.

[0014] Example embodiments include a system for determining RDSON of a high voltage transistor, and a measurement circuit for measuring the transistor drain voltage during switching. This circuit facilitates high-resolution measurement of the dynamic characteristics of the drain-source voltage of AlGaN / GaN and SiC devices or other high-voltage transistors. The apparatus and techniques are useful in hard switching and other high voltage circuits, including device under test (DUT) high voltage tra...

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Abstract

In described examples of a measurement circuit to measure a drain voltage of a drain terminal (106) of the high voltage transistor (M0) during switching, the measurement circuit includes an attenuatorcircuit (102) to generate an attenuator output signal (VDCLAMP) representing a voltage across the high voltage transistor (M0) when the high voltage transistor (M0) is turned on, and a differential amplifier (124) to provide an amplified sense voltage signal (VO) according to the attenuator output signal (VDCLAMP). The attenuator circuit (102) includes a clamp transistor (M1) coupled with the drain terminal (106) of the high voltage transistor (M0) to provide a sense signal (VSENSE) to a first internal node (110), a resistive voltage divider circuit (116) to provide the attenuator output signal (VDCLAMP) based on the sense signal (VSENSE), and a first clamp circuit (Z1) to limit the sense signal voltage (VSENSE) when the high voltage transistor (M0) is turned off.

Description

technical field [0001] The present invention relates generally to measuring transistor operating characteristics, and more particularly to systems and circuits for measuring the voltage across a high voltage transistor during switching to determine on-state impedance during switching. Background technique [0002] Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) High Electron Mobility Transistors (HEMTs), Silicon Carbide (SiC) and other high voltage transistors are used in become popular in high voltage power conversion applications. Under certain dynamic conditions, electron trapping in AlGaN / GaN HEMTs leads to current collapse and increased drain-source on-state resistance (RDSON). However, measuring the dynamic RDSON performance of HEMTs is difficult. Measurements made by semiconductor test instruments cannot simulate real device states in real power electronics circuits. For example, switching transistors in typical power converters undergo hard-switching tr...

Claims

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Application Information

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IPC IPC(8): G01R19/00G01R31/26G01R27/02
CPCG01R31/2617G01R31/2621G01R31/2639G01R15/04G01R19/0084G01R27/02
Inventor S·R·巴尔G·L·史密斯D·瑞兹弗拉瑞斯
Owner TEXAS INSTR INC
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