Semiconductor device and method of forming the same
A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as poor electrical performance of semiconductor devices, and achieve the effect of improving electrical performance
Active Publication Date: 2021-06-08
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP +1
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Problems solved by technology
[0004] However, the electrical properties of semiconductor devices composed of planar MOS transistors and fin field effect transistors are poor.
Method used
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Embodiment Construction
[0030] As mentioned in the background, the electrical performance of semiconductor devices formed in the prior art is relatively poor.
[0031] Figure 1 to Figure 3 It is a structural schematic diagram of the formation process of a semiconductor device.
[0032] refer to figure 1 , providing a substrate, the substrate has a first dielectric layer 110, and the first dielectric layer 110 has an opening through the first dielectric layer 110; a metal gate electrode material layer 120 is formed in the opening and on the first dielectric layer 110 .
[0033] refer to figure 2 grinding the metal gate electrode material layer 120 until the top surface of the first dielectric layer 110 is exposed, so that the metal gate electrode material layer 120 forms an initial gate electrode 121 .
[0034] refer to image 3 , removing part of the initial gate electrode 121 (refer to figure 2 ), the initial gate electrode 121 is formed into a metal gate electrode 122, and the thickness of...
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A semiconductor device and a method for forming the same, wherein the method includes: providing a substrate, the substrate has a first initial dielectric layer, and the first initial dielectric layer has an opening through the first initial dielectric layer; forming a metal in the opening Gate electrode, the method for forming the metal gate electrode includes: forming a metal gate electrode material layer in the opening and on the first initial dielectric layer; grinding the metal gate electrode material layer until the top surface of the first initial dielectric layer is exposed; After grinding the metal gate electrode material layer, remove part of the first initial dielectric layer, so that the first initial dielectric layer forms a first dielectric layer, the thickness of the first dielectric layer is smaller than the thickness of the first initial dielectric layer; Source and drain conductive plugs, the source and drain conductive plugs are respectively located on both sides of the metal gate electrode. The method improves the electrical performance of the semiconductor device.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] MOS (Metal-Oxide-Semiconductor) transistors are one of the most important components in modern integrated circuits. The basic structure of the MOS transistor includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate, and the gate structure includes: a gate dielectric layer located on the surface of the semiconductor substrate and a gate electrode layer located on the surface of the gate dielectric layer; The source and drain doped regions in the semiconductor substrate on both sides of the pole structure. [0003] With the development of semiconductor technology, the ability of the traditional planar MOS transistor to control the channel current becomes weaker, resulting in serious leakage current. Fin Field Effect Transistor (Fin FET) i...
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IPC IPC(8): H01L29/417H01L29/423H01L21/336H01L29/78
CPCH01L29/41725H01L29/4232H01L29/66477H01L29/78
Inventor 李勇
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP