A kind of vertical structure nano array LED and preparation method thereof

Abstract

The invention discloses a vertical structure nano-array LED, comprising a bottom electrode layer, a first graphene layer, an umbrella-shaped GaN nano-column array layer, a P-type GaN thin film, an Al x In y Ga 1‑x‑y N film, the second graphene layer and the top electrode layer; the first graphene layer is compounded with a patterned isolation layer; wherein, x=0-0.35, y=0-0.07; the umbrella-shaped GaN nanocolumn array The layer from core to shell includes GaN nanopillar core, n-type GaN nano inner shell and In(Al)GaN nano outer shell sequentially compounded. The vertical structure nano-array LED effectively solves the situation of limited epitaxial growth, greatly reduces production costs, and has high luminous efficiency and high performance.

Description

technical field [0001] The invention relates to the field of nano-array LEDs, in particular to a vertical-structure nano-array LED and a preparation method thereof. Background technique [0002] As a new type of solid-state lighting source and green light source, light-emitting diode (LED) has significant advantages such as small size, high brightness, low energy consumption, environmental protection, and long service life. and other fields have a wide range of applications. [0003] The current mainstream LED materials are mainly group III nitrides. Compared with the previous two generations of lighting materials, the material properties of this material are more excellent, which is the premise and guarantee for the excellent performance of LEDs. However, it is also due to the difficulty in preparing III-nitride single crystals that the GaN-based thin film needs to be grown by heteroepitaxy method, the production cost is high, the substrate selectivity is narrow, and the q...

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Problems solved by technology

However, it is also due to the difficulty in preparing III-nitride single crystals that the GaN-based thin film needs to be grown by heteroepitaxy method, the production cost is high, the substrate selectivity is narrow, and the quality of thin-film epitaxial growth is limited by the III-nitride material and the substrate material. Lattice matching between them further limits the performance improvement of III-nitride-based LEDs

In addition, the limited light emitting area and current expansion performance of LED devices caused by the traditional lateral structure also severely limit the improvement of the light efficiency of horizontal structure LEDs.

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