Semiconductor structure and formation method thereof

Abstract

A formation method of a semiconductor structure comprises the following steps: providing a substrate, wherein fin parts are arranged on the substrate, and a fin part gap is kept between every two adjacent fin parts; arranging a hard mask above the fin parts; forming a punchthrough-proof layer above the hard mask, wherein the punchthrough-proof layer is filled with punchthrough-proof ions; formingan anti-spreading layer which is lower than the fin parts, and injecting anti-spreading ions into the fin part gaps, wherein the anti-spreading ions can prevent the punchthrough-proof ions from beingspread to the tops of the fin parts; removing the hard mask; and annealing.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the improvement of the integration level of semiconductor devices, the critical dimensions of transistors are continuously reduced. The reduction of critical dimensions means that more transistors can be arranged on a chip, thereby improving the performance of devices. However, as the size of the transistor decreases sharply, the thickness of the gate dielectric layer and the operating voltage cannot be changed accordingly, which makes it more difficult to suppress the short channel effect, thereby increasing the channel leakage current of the transistor. [0003] The gate of the Fin Field-Effect Transistor (FinFET) has a forked 3D structure similar to a fish fin. The channel of the FinFET protrudes from the surface of the substrate to form a fin, and the gate covers th...

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Problems solved by technology

[0005] However, the method of forming the semiconductor structure e

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