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Preparation method for MoS2/TiO2 heterostructure film photocatalyst

A photocatalyst and heterostructure technology, applied in physical/chemical process catalysts, chemical instruments and methods, chemical/physical processes, etc., to achieve the effect of improving photocatalytic activity, improving stability, and reducing recombination rate

Active Publication Date: 2018-11-27
HEFEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the prior art MoS 2 / TiO 2 The heterogeneous structure is a conventional powder composite, that is, titanium oxide powder is prepared first, and then molybdenum sulfide is compounded on the titanium oxide powder, so the prepared sample is a powder structure, which leads to the need for additional additives / binders in the process of preparing electrodes etc., and will face the problem of recycling after catalysis

Method used

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  • Preparation method for MoS2/TiO2 heterostructure film photocatalyst
  • Preparation method for MoS2/TiO2 heterostructure film photocatalyst
  • Preparation method for MoS2/TiO2 heterostructure film photocatalyst

Examples

Experimental program
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Embodiment 1

[0035] Preparation of TiO 2 Film sample: add tetrabutyl titanate to hydrochloric acid solution and stir to obtain a clear solution, the concentration of the hydrochloric acid solution is 18wt%, and the volume ratio of tetrabutyl titanate to hydrochloric acid solution is 1:60; , ethanol, deionized water ultrasonically cleaned and dried FTO glass is placed obliquely in the polytetrafluoroethylene liner, the conductive side of the FTO glass is facing down, then the clarified solution is poured into the liner, and The liner is sealed in an autoclave, and the autoclave is placed in an oven at 150°C for 12 hours. After cooling to room temperature, the FTO glass is taken out and rinsed with deionized water to remove the residual reaction solution; then the FTO The glass is annealed at 450°C, and the annealing heating rate is controlled to be 2°C / min, and finally the TiO adhered on the surface of the FTO glass is obtained. 2 film.

[0036] Preparation of MoS 2 Sensitized TiO 2 fil...

Embodiment 2

[0056] Preparation of TiO 2 Film sample: add tetrabutyl titanate to hydrochloric acid solution and stir to obtain a clear solution, the concentration of the hydrochloric acid solution is 15wt%, and the volume ratio of tetrabutyl titanate to hydrochloric acid solution is 1:58; , ethanol, deionized water ultrasonically cleaned and dried FTO glass is placed obliquely in a polytetrafluoroethylene liner, the conductive side of the FTO glass is facing down, and then the clarified solution is poured into the liner, and The liner is sealed in an autoclave, and the autoclave is placed in an oven at 145°C for 11 hours. After cooling to room temperature, the FTO glass is taken out and rinsed with deionized water to remove the residual reaction solution; then the FTO The glass is annealed at 430°C, and the annealing heating rate is controlled to be 1.5°C / min, and finally the TiO adhered on the surface of the FTO glass is obtained. 2 film.

[0057] Preparation of MoS 2 Sensitized TiO 2...

Embodiment 3

[0061] Preparation of TiO 2Film sample: add tetrabutyl titanate to hydrochloric acid solution and stir to obtain a clear solution, the concentration of the hydrochloric acid solution is 20wt%, and the volume ratio of tetrabutyl titanate to hydrochloric acid solution is 1:62; , ethanol, deionized water ultrasonically cleaned and dried FTO glass is placed obliquely in a polytetrafluoroethylene liner, the conductive side of the FTO glass is facing down, and then the clarified solution is poured into the liner, and The liner is sealed in an autoclave, and the autoclave is placed in an oven at 155°C for 13 hours. After cooling to room temperature, the FTO glass is taken out and rinsed with deionized water to remove the residual reaction solution; then the FTO The glass is annealed at 470°C, and the annealing heating rate is controlled to be 2.5°C / min, and finally the TiO adhered on the surface of the FTO glass is obtained. 2 film.

[0062] Preparation of MoS 2 Sensitized TiO 2 ...

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Abstract

The invention relates to a preparation method for a MoS2 / TiO2 heterostructure film photocatalyst. The method comprises the following steps: immersing a TiO2 film loaded to FTO glass in an ammonia water solution; dissolving ammonium tetrathiomolybdate and polyvinylpyrrolidone in a mixed solution of N-N-dimethylformamide and deionized water to be ultrasonically treated; transferring the ultrasonically treated mixed solution to a liner of a high pressure reaction kettle where the TiO2 film sample treated by ammonia water is placed, placing the TiO2 film sample with the film face of which faces downward, putting the closed high reaction kettle and placing the high reaction kettle into an oven; cooling the high pressure reaction kettle to room temperature and taking out the TiO2 film and washing the sample with deionized water and ethanol thoroughly; and then carrying out vacuum drying. The MoS2 / TiO2 heterostructure film photocatalyst is formed on the TiO2 film by means of MoS2 in-situ growth, has good photocatalytic property and photoelectric properties and is convenient to recycle conveniently after catalysis.

Description

technical field [0001] The invention belongs to the field of photoelectric catalytic materials, in particular to a kind of MoS 2 / TiO 2 Preparation method of heterostructure thin film photocatalyst. Background technique [0002] Among different semiconductors, as an ideal candidate material for photocatalyst and photoanode—titanium dioxide (TiO 2 ), have received extensive attention and research due to their advantages such as low cost, non-toxicity, high physical and chemical stability, and strong redox activity. With the development of nanoscience and nanotechnology, TiO with different nanostructures 2 There are endless. Among them, one-dimensional (1D) TiO 2 (such as nanotubes, nanorods, nanowires) have attracted more attention because of its one-dimensional structure for photogenerated electrons in TiO 2 Transport in thin films provides high-speed pathways that suppress charge recombination. However, TiO 2 Is a wide bandgap semiconductor, which limits its absorpt...

Claims

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Application Information

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IPC IPC(8): B01J27/051B01J35/06
CPCB01J27/051B01J35/59B01J35/39
Inventor 杨蕾孙兆奇尹奇异王壮张苗鲁红典张全争田长安
Owner HEFEI UNIV
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