Gallium oxide-based ultraviolet detector and manufacture method therefor

Abstract

The present invention provides a gallium oxide-based ultraviolet detector, which comprises a gallium oxide crystal substrate, a graphene layer, a first ohmic contact electrode and a second ohmic contact electrode, wherein the first ohmic contact electrode is grown on a first plane of the gallium oxide crystal substrate; a second plane of the gallium oxide crystal substrate is formed with a needletip type structure; the graphene layer is located on the surface of the second plane of the gallium oxide crystal substrate and contacts with the needle tip type structure formed on the second plane of the gallium oxide crystal substrate; and the second ohmic contact electrode is grown on the surface of the graphene layer that is not in contact with the gallium oxide crystal substrate. The invention also provides a manufacture method for the gallium oxide-based ultraviolet detector. The gallium oxide-based ultraviolet detector and the manufacture method for the gallium oxide-based ultravioletdetector in the invention can improve the response sensitivity and the response speed of the ultraviolet detector; the process is simple; and the cost is low.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a gallium oxide-based ultraviolet detector and a manufacturing method thereof. Background technique [0002] In recent years, ultraviolet detectors have attracted much attention because of their great application value in both civil and military fields. Ultraviolet detectors have broad application prospects in space astronomical telescopes, military missile early warning, non-line-of-sight confidential optical communications, maritime fog-breaking pilots, high-voltage electricity monitoring, wild fire remote sensing, and biochemical detection. The ultraviolet detector has a high response to ultraviolet radiation and can convert optical radiation into electrical signals by using the photoelectric effect. The ultraviolet detector mainly includes an outer photoelectric effect device and an inner photoelectric effect device. External photoelectric effect devic...

AI Technical Summary

Problems solved by technology

However, Ga 2 o 3 The manufacturing process of the Schottky structure of the UV-based detector is relatively complicated, which increases the production cost; although the manufacturing process of the photoconductive structure and the MSM structure is relatively simple, the dark current of the photoconductive structure is large and the response sensitivity is low; the response speed of the MSM structure is slow.

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