Gallium oxide-based ultraviolet detector and manufacture method therefor

An ultraviolet detector, gallium oxide technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the complex manufacturing process of Schottky structure, slow response speed of MSM structure, and large dark current of photoconductive structure. and other problems to achieve the effect of improving response sensitivity and response speed, low cost and high response speed

Active Publication Date: 2018-11-30
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

However, Ga 2 o 3 The manufacturing process of the Schottky structure of the UV-based detector is relatively complicated, which increases the production cost; although the manufacturing process of the photo

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  • Gallium oxide-based ultraviolet detector and manufacture method therefor
  • Gallium oxide-based ultraviolet detector and manufacture method therefor
  • Gallium oxide-based ultraviolet detector and manufacture method therefor

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[0034] In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0035] In a first aspect, an embodiment of the present invention provides a Ga 2 O 3 based UV detectors. The Ga provided by the present invention 2 O 3 The base ultraviolet detector includes: a gallium oxide substrate with a plurality of needle-like structures distributed on the front side, a graphene layer loca...

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Abstract

The present invention provides a gallium oxide-based ultraviolet detector, which comprises a gallium oxide crystal substrate, a graphene layer, a first ohmic contact electrode and a second ohmic contact electrode, wherein the first ohmic contact electrode is grown on a first plane of the gallium oxide crystal substrate; a second plane of the gallium oxide crystal substrate is formed with a needletip type structure; the graphene layer is located on the surface of the second plane of the gallium oxide crystal substrate and contacts with the needle tip type structure formed on the second plane of the gallium oxide crystal substrate; and the second ohmic contact electrode is grown on the surface of the graphene layer that is not in contact with the gallium oxide crystal substrate. The invention also provides a manufacture method for the gallium oxide-based ultraviolet detector. The gallium oxide-based ultraviolet detector and the manufacture method for the gallium oxide-based ultravioletdetector in the invention can improve the response sensitivity and the response speed of the ultraviolet detector; the process is simple; and the cost is low.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a gallium oxide-based ultraviolet detector and a manufacturing method thereof. Background technique [0002] In recent years, ultraviolet detectors have attracted much attention because of their great application value in both civil and military fields. Ultraviolet detectors have broad application prospects in space astronomical telescopes, military missile early warning, non-line-of-sight confidential optical communications, maritime fog-breaking pilots, high-voltage electricity monitoring, wild fire remote sensing, and biochemical detection. The ultraviolet detector has a high response to ultraviolet radiation and can convert optical radiation into electrical signals by using the photoelectric effect. The ultraviolet detector mainly includes an outer photoelectric effect device and an inner photoelectric effect device. External photoelectric effect devic...

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Application Information

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IPC IPC(8): H01L31/0352H01L31/032H01L31/108H01L31/18
CPCH01L31/032H01L31/035281H01L31/1085H01L31/18Y02P70/50
Inventor 龙世兵覃愿董航何启鸣刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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