Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Quantum dot light emitting diode and its application

A technology of quantum dot light-emitting and diode

Active Publication Date: 2020-12-04
GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the device performance of quantum dot light-emitting diodes still needs to be improved.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot light emitting diode and its application
  • Quantum dot light emitting diode and its application
  • Quantum dot light emitting diode and its application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] In this embodiment, a quantum dot light emitting diode has a structure such as figure 1 As shown, it includes a substrate (including the first electrode ITO), a hole injection layer (PEODT:PSS) laminated on the substrate, a hole transport layer (poly-TPD) laminated on the surface of the hole injection layer, and a hole injection layer (poly-TPD) laminated on the surface of the hole. The quantum dot luminescent layer (CdSe / ZnS) on the surface of the hole transport layer, the electron transport layer (TiO 2 : PDI-Py), and the second electrode (Al) disposed on the electron transport layer.

[0027] The material of the electron transport layer includes TiO with a diameter of 3 to 5 nm in a mass ratio of 100:5 2 Nanoparticles and peryleneimide derivatives (PDI-Py, see formula 1 for the structure).

[0028]

[0029] The preparation method of the above-mentioned quantum dot light-emitting diode is as follows:

[0030] (1) Substrate cleaning: The glass substrate with 150n...

Embodiment 2

[0039] This embodiment is a kind of quantum dot light-emitting diode, its raw material and production method are similar to Embodiment 1, the difference is that: the material of the electron transport layer includes HfO with a diameter of 3 to 5 nm and a weight ratio of 100:5. 2 Nanoparticles and peryleneimide derivatives (see formula 2 for the structure).

[0040]

Embodiment 3

[0042] This embodiment is a kind of quantum dot light-emitting diode, its raw material and production method are similar to Embodiment 1, the difference is that: the material of the electron transport layer includes TiO with a diameter of 3 to 5 nm in a weight ratio of 100:1. 2 Nanoparticles and peryleneimide derivatives (see formula 1 for the structure).

[0043]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a quantum dot light-emitting diode and its application. The quantum dot light-emitting diode includes an electron transport layer; the material of the electron transport layer includes metal oxide particles and perylene imide derivatives with a mass ratio of 100:1-100:50. On the one hand, the quantum dot light-emitting diode can realize the continuous adjustment of electron mobility, on the other hand, it can reduce the defects caused by the partial aggregation of metal oxide particles, improve the film quality of the electron transport layer, thereby reducing the leakage current of the device, and comprehensively improve QLED device performance.

Description

technical field [0001] The invention relates to a light-emitting device, in particular to a quantum dot light-emitting diode and its application. Background technique [0002] Quantum dot light-emitting diode (QLED) refers to a type of light-emitting diode with quantum dot materials as the light-emitting layer. Ink printing) and other advantages have broad application prospects in large-area display and have attracted widespread attention. [0003] However, during the synthesis process of quantum dot materials, there will be many dangling bonds and surface defect states on the surface, resulting in poor photostability. Therefore, the quantum dot materials used in quantum dot light-emitting diodes are generally passivated by growing a wide-bandgap inorganic semiconductor shell on the outer layer of the quantum dot core or adding organic ligands such as surfactants to the surface to improve its quantum performance. efficiency and photostability. At present, Cd-based II-VI q...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54
CPCH10K85/654H10K85/6572H10K50/115H10K50/165
Inventor 余磊
Owner GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com