Graphene-coated silicene, preparation method and use method thereof

Abstract

The invention provides a graphene-coated silicene, a preparation method and a use method thereof. The preparation method comprises the following steps: placing the metal catalytic substrate in a reaction chamber, removing the natural oxide layer on the metal catalytic substrate to expose the metal layer, selecting a gaseous hydrocarbon carbon source as a precursor, and depositing a chemical vapor deposition method on the metal Graphene is formed on the graphene layer; the gaseous hydrocarbon carbon source in the reaction chamber is closed, and the silicon-containing gas source and reducing gas are introduced to make the evaporated silicon atoms epitaxially grow silicene on the graphene surface; only the silicon-containing gas source is closed, Alternatively, the silicon-containing gas source and the reducing gas are simultaneously turned off, and a gaseous hydrocarbon carbon source is introduced to coat carbon atoms on the surface of the silicene, thereby obtaining graphene-coated silicene. The silicene obtained in the present invention can maintain the original structure in the air for more than two years, and this method breaks the traditional method, and the preparation conditions are relatively relaxed and simple.

Description

technical field [0001] The invention relates to the technical field of silicene preparation, in particular to a graphene-coated silicene prepared based on metal catalysis, a preparation method and a use method thereof. Background technique [0002] Sicene is a two-dimensional nanomaterial in which silicon atoms are arranged in a planar honeycomb shape, and has a good two-dimensional crystal structure and electrical properties. Compared with graphene with zero band gap, silicene has a certain forbidden band width, so it has broad application prospects in the field of semiconductor electronic devices and optoelectronic devices. sp of silicene 2 -sp 3 The structural properties of the surface are extremely sensitive, resulting in a very active chemical environment, which makes the preparation of silicene a strong limitation. [0003] The current method for preparing silicene is silicon source evaporation epitaxial growth method. In a high-vacuum environment, silicon wafers a...

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Problems solved by technology

However, when evaporated atoms epitaxially grow silicene on the substrate, due to the strong interfacial interaction, silicene will be restructured, and the degree of warping of the atomic layer will change. Some atoms will rise and some atoms will fall, resulting in The unit cell becomes larger, the symmetry decreases, or a few-layer structure is formed, thereby destroying the Dirac-Fermi characteristics of silicene and affecting the performance of the silicene film layer material. In addition, the silicene obtained through the above substrate Not only is the cost high, but the size is extremely small and cannot be exposed to the air

Some researchers also use alumina coating to protect the silicene synthesized on the silver surface. However, the silicene prepared in this way is very unstable and will be completely oxidized in less than a day.

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