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A magnetron sputtering coating cathode structure

A technology of magnetron sputtering coating and cathode structure, which is applied in sputtering coating, vacuum evaporation coating, ion implantation coating and other directions, can solve the problems of magnetic field attenuation, etc. stable effect

Active Publication Date: 2019-10-18
CHONGQING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a magnetron sputtering coating cathode structure, the purpose is to solve the problem of magnetic field attenuation in the prior art, to improve the coating quality

Method used

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  • A magnetron sputtering coating cathode structure
  • A magnetron sputtering coating cathode structure
  • A magnetron sputtering coating cathode structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0086] Specifically, the back plate 2 has a diameter of 91.6 mm and a thickness of 6.5 mm, and the first iron core of the first magnetic field generating structure 31 is a ring structure with an inner diameter of 71.6 mm, an outer diameter of 91.6 mm, and a height of 25mm, the diameter of the wire in the first excitation coil is 1mm, and the conductivity is 6×10 7 S / m, the number of turns is 3500 turns. The second iron core in the second magnetic field generating structure 32 is a cylindrical structure with a height of 25mm and a diameter of 27mm. The diameter of the wire in the second excitation coil is 1mm and the conductivity is 6. ×107S / m, the number of turns is 3500 turns, the plane figure of the target structure 1 is a circle with a diameter of 91.6mm.

[0087] Perform geometric modeling of the above-mentioned cathode structure, define the physical properties of air, set the first target material 11 as a titanium target material, and set the thickness of the first target mat...

Embodiment 2

[0090] In the embodiment of the present invention, the target structure 1 only includes the first target 11, the top view of the target structure 1 and the back plate 2 is circular, and the back plate 2 is The copper back plate, specifically, the diameter of the back plate 2 is 91.6 mm, the thickness is 6.5 mm, the inner diameter of the first iron core in the first magnetic field generating structure 31 is 71.6 mm, the outer diameter is 91.6 mm, and the height is 25mm, the diameter of the wire in the first excitation coil is 1mm, and the conductivity is 6×10 7 S / m, the number of turns is 3500 turns, the height of the second core in the second magnetic field generating structure 32 is 25mm, the diameter is 27mm, the diameter of the wire in the second excitation coil is 1mm, and the conductivity is 6×10 7 S / m, the number of turns is 3500 turns, and the plane figure of the target structure 1 is a circle with a diameter of 91.6 mm.

[0091] Specifically, the COMSOL Multiphysics softwa...

Embodiment 3

[0097] In the embodiment of the present invention, the target structure 1 includes two targets: a first target 11 and a second target 12. That is, the target structure 1 is a splicing target structure, and the target structure 1 and the The shape 2 of the backing plate is circular, and the backing plate 2 is a copper backing plate. Specifically, the shape of the second target material 12 is a disc shape, and a number of symmetrical pastes are attached on part of the racetrack area 13 of the first target material 11 The second target material 12, the diameter of the back plate 2 is 91.6mm, the thickness is 6.5mm, the inner diameter of the first iron core in the first magnetic field generating structure 31 is 71.6mm, the outer diameter is 91.6mm, and the height is 25mm , The diameter of the wire in the first excitation coil is 1mm, and the conductivity is 6×10 7 S / m, the number of turns is 3500 turns, the height of the second core in the second magnetic field generating structure ...

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Abstract

The invention discloses a magnetron sputtering coating cathode structure which comprises a target structure, a backboard and a magnetic component which are sequentially stacked; the magnetic componentcomprises a first magnetic field generation structure and a second magnetic field generation structure; the first magnetic field generation structure is of an annular magnetic field structure; the second magnetic field generation structure is arranged in a center region of the annular magnetic field structure; the first magnetic field generation structure and the second magnetic field generationstructure form an annular magnetic field region, wherein the first magnetic field generation structure comprises a first iron core and a first magnet exciting coil winding the outer surface of the first iron core, and the second magnetic field generation structure comprises a second iron core and a second magnet exciting coil winding the outer surface of the second iron core, so that when the intensity of a magnetic field generated by the magnetic component attenuates along with prolonging of use time, the intensity of the magnetic field generated by the magnetic component is regulated by regulating the size of current of the first magnet exciting coil and / or the second magnet exciting coil, and the problem that the coating quality is declined as the intensity of the magnetic field attenuates is solved.

Description

Technical field [0001] The invention relates to the field of magnetron sputtering coating, in particular to a magnetron sputtering coating cathode structure. Background technique [0002] Magnetron sputtering is a method of depositing materials in PVD (Physical Vapor Deposition), which is very suitable for the production of contact layers for optical films, organic light-emitting diodes (OLED), and thin film transistors. Moreover, magnetron sputtering has become one of the most commonly used deposition methods due to its large-scale production characteristics and the ability to deposit oxides or other compounds while maintaining elemental composition. [0003] Specifically, magnetron sputtering coating is to introduce a magnetic field between the two poles of the glow discharge in a vacuum chamber, and use electrons to collide with the atoms of the sputtering gas under the action of an electric field to make it into a plasma. The ions in the plasma are The electric field bombards ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35
Inventor 孙德恩陈宏
Owner CHONGQING UNIV
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