The invention relates to the fields of semiconductors, LEDs, photovoltaic solar energy production and the like, and concretely relates to a purifying method for ultra-pure hydrogen, argon and helium. The method includes a drying deoxidation process, a degassing process and a regeneration process; the three processes are realized by a control system, and the control system comprises a central control unit, and a flow meter, a programmed valve group, an alternating current contactor, a pressure sensor and a heating element which are respectively connected with the central control unit. The deep removal of O2, H2O, CO, CO2, N2, CH4, TCH and other impurities in feed gas solves the problem of electronic component quality decrease caused by the influences of the gas impurities on devices in the electronic industry. A two-tower purification flow is adopted, one of two adsorption dryers works, the remaining one adsorption dryer regenerates, and the two adsorption dryers alternately work and regenerate in order to realize the continuous purification of the feed gas.