Purifying method for ultra-pure hydrogen, argon and helium

A purification method and hydrogen technology, applied in chemical instruments and methods, inert gas compounds, hydrogen/synthesis gas production, etc., can solve problems affecting the production of devices in the electronics industry, and the quality of electronic components declines

Inactive Publication Date: 2017-12-05
DALIAN ZHONGDING CHEM
View PDF4 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to make up for the deficiencies in the prior art, the present invention provides a method for purifying ultra-high-purity hydrogen, argon, and helium, which can remove O in the raw material gas. 2 、H 2 O, CO, CO 2 , N 2 、CH 4 , TCH and other impurities are deeply removed, which solves the problem that gas impurities affect the production of devices in the electronics industry and cause the quality of electronic components to decline

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Purifying method for ultra-pure hydrogen, argon and helium
  • Purifying method for ultra-pure hydrogen, argon and helium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] The present invention will be further described below in conjunction with accompanying drawing:

[0018] Such as figure 1 As shown, a method for purifying ultra-high-purity hydrogen, argon, and helium includes a drying and deoxidizing process, an air intake process, and a regeneration process; the dry and deoxidizing process is as follows: the raw material gas enters the adsorption dryer through the raw material gas inlet 6, O in raw gas 2 React with the reduced deoxidizer in the adsorption dryer, and the reduced deoxidizer absorbs H in the feed gas at the same time 2 O.CO 2 ; The adsorption drier includes an adsorption drier A1 and an adsorption drier B2, and the adsorption drier A1 and the adsorption drier B2 circulate gas adsorption and regeneration, and both the adsorption drier A1 and the adsorption drier B2 are equipped with There are temperature sensors, electric heaters, and heat storage mechanisms; the suction process is as follows: the raw material gas that...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the fields of semiconductors, LEDs, photovoltaic solar energy production and the like, and concretely relates to a purifying method for ultra-pure hydrogen, argon and helium. The method includes a drying deoxidation process, a degassing process and a regeneration process; the three processes are realized by a control system, and the control system comprises a central control unit, and a flow meter, a programmed valve group, an alternating current contactor, a pressure sensor and a heating element which are respectively connected with the central control unit. The deep removal of O2, H2O, CO, CO2, N2, CH4, TCH and other impurities in feed gas solves the problem of electronic component quality decrease caused by the influences of the gas impurities on devices in the electronic industry. A two-tower purification flow is adopted, one of two adsorption dryers works, the remaining one adsorption dryer regenerates, and the two adsorption dryers alternately work and regenerate in order to realize the continuous purification of the feed gas.

Description

technical field [0001] The invention belongs to the fields of semiconductor, LED, photovoltaic solar energy production, etc., and specifically relates to a protective gas for production in the optoelectronic industry, and more specifically to a method for purifying ultra-high-purity hydrogen, argon, and helium. Background technique [0002] At present, the most common technology used in my country to purify hydrogen and argon and helium is the front-end catalytic deoxidation and the back-end drying and dehydration. This technology will produce a large amount of reaction water during the deoxygenation process; and it can only remove oxygen and water in hydrogen, but for CO, CH 4 , TCH, N 2 Impurities such as impurities cannot be removed, and these impurities have an important impact on the production quality of electronic devices, so the existing purification methods cannot meet the domestic production needs of large-scale integrated circuits. Contents of the invention ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01B3/56C01B23/00
CPCC01B3/56C01B23/0057C01B23/0084C01B2203/043C01B2210/0015C01B2210/0023Y02P20/133
Inventor 高嵩计国栋赵霖刘皖南谭丽燕乐昀邱长春
Owner DALIAN ZHONGDING CHEM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap