Purifying method for ultra-pure hydrogen, argon and helium

Abstract

The invention relates to the fields of semiconductors, LEDs, photovoltaic solar energy production and the like, and concretely relates to a purifying method for ultra-pure hydrogen, argon and helium. The method includes a drying deoxidation process, a degassing process and a regeneration process; the three processes are realized by a control system, and the control system comprises a central control unit, and a flow meter, a programmed valve group, an alternating current contactor, a pressure sensor and a heating element which are respectively connected with the central control unit. The deep removal of O2, H2O, CO, CO2, N2, CH4, TCH and other impurities in feed gas solves the problem of electronic component quality decrease caused by the influences of the gas impurities on devices in the electronic industry. A two-tower purification flow is adopted, one of two adsorption dryers works, the remaining one adsorption dryer regenerates, and the two adsorption dryers alternately work and regenerate in order to realize the continuous purification of the feed gas.

Description

technical field [0001] The invention belongs to the fields of semiconductor, LED, photovoltaic solar energy production, etc., and specifically relates to a protective gas for production in the optoelectronic industry, and more specifically to a method for purifying ultra-high-purity hydrogen, argon, and helium. Background technique [0002] At present, the most common technology used in my country to purify hydrogen and argon and helium is the front-end catalytic deoxidation and the back-end drying and dehydration. This technology will produce a large amount of reaction water during the deoxygenation process; and it can only remove oxygen and water in hydrogen, but for CO, CH 4 , TCH, N 2 Impurities such as impurities cannot be removed, and these impurities have an important impact on the production quality of electronic devices, so the existing purification methods cannot meet the domestic production needs of large-scale integrated circuits. Contents of the invention ...

AI Technical Summary

Problems solved by technology

[0003] In order to make up for the deficiencies in the prior art, the present invention provides a method for purifying ultra-high-purity hydrogen, argon, and helium, which can remove O in the raw material gas. 2 、H 2 O, CO, CO 2 , N 2 、CH 4 , TCH and other impurities are deeply removed, which solves the problem that gas impurities affect the production of devices in the electronics industry and cause the quality of electronic components to decline

Images