Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for adjusting crystalline silica growth solid-liquid interface

A solid-liquid interface and crystalline silicon technology, which is applied in the field of solar photovoltaics, can solve problems such as quality fluctuations of crystalline silicon ingots, misalignment of solid-liquid interfaces, and uneven distribution of the thermal field of the ingot furnace, so as to increase and decrease the yield of ingots Dislocation density and effect of improving photoelectric conversion efficiency

Inactive Publication Date: 2015-01-28
JIANGXI UNIEX NEW ENERGY CO LTD
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The instability of the solid-liquid interface directly leads to fluctuations in the quality of crystalline silicon ingots
At present, most enterprises that produce crystalline silicon not only have a W-shaped interface as a whole, but also encounter the uneven distribution of the thermal field of the ingot furnace. This uneven thermal field directly leads to the inconsistency of the solid-liquid interface. lining

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for adjusting crystalline silica growth solid-liquid interface
  • Method for adjusting crystalline silica growth solid-liquid interface
  • Method for adjusting crystalline silica growth solid-liquid interface

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] The invention discloses a method for adjusting the solid-liquid interface of crystalline silicon growth. The polysilicon ingot is grown by using a common lifting heat-insulating cage type GT450 directional solidification polysilicon furnace. The material of the crucible is high-purity quartz ceramics, and the size is 880*880*420mm. Design the crucible, side 110, side 120, side 130, side 140, and bottom 150. The thickness is designed to be 22mm, 22mm, 26mm, 22mm, 23mm in turn, and the wall thickness corresponding to side 130 is increased from 22mm to 26mm. Fill the crucible with silicon Material 485kg, successively through the melting stage → crystal growth stage → annealing stage → cooling stage. After the ingot casting is completed, the silicon ingot is longitudinally sectioned, and the longitudinal section of the five small square ingots corresponding to the center line of the silicon ingot is detected by the LIS-R1 photoluminescence tester produced by BTI Company. Af...

Embodiment 2

[0028] An improved method for adjusting the solid-liquid interface of crystalline silicon growth, specifically changing the shape, size and ingot casting process of the insulation strips on the side of the heat insulation cage in the ingot furnace: the ingot furnace includes an upper furnace body 1, a heat insulation plate 2. Side heat insulation cage 3, heater 4, graphite guard plate 5, heat exchange block 6, lower furnace body 7, heat preservation bar 8, bottom heat insulation plate 9, heat preservation device 10, ceramic crucible 11, lifting connecting rod 12, Electrode 13; Upper furnace body 1 and lower furnace body 7 are connected to form the whole furnace body, and ceramic crucible 10 is arranged in the furnace body, and crucible cover plate 11 is placed on ceramic crucible 10, and ceramic crucible 10 outside is provided with graphite guard plate 5, and ceramic crucible 10 is provided with a heat exchange block 6, the heater 4 is connected with the upper furnace body 1 th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
widthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for adjusting a crystalline silica growth solid-liquid interface. The method can be realized by two approaches. The two approaches comprise 1, designing four side walls having different thickness values of a crucible, and 2, changing sides of thermal insulation strips at sides of a thermal insulation cage in an ingot furnace thermal field and accordingly changing an ingot casting technology. The method solves the problem that crystal growth solid-liquid interface change causes silicon ingot quality decreasing so that photoelectric conversion efficiency of a crystalline silica solar cell piece is improved.

Description

technical field [0001] The invention relates to a method for adjusting the solid-liquid interface of crystalline silicon growth and belongs to the technical field of solar photovoltaics. Background technique [0002] Solar photovoltaic power generation is currently one of the fastest-growing forms of sustainable energy utilization. As the demand for solar cells increases at a rate of about tens of percent per year, the demand for polycrystalline silicon ingots for solar cells also increases significantly every year. . More than 85% of the modern photovoltaic industry is based on crystalline silicon wafer solar cells, more than half of which are made of directional solidified crystalline silicon materials. In the process of directional solidification, the solid-liquid interface of the crystal plays a decisive role in the quality of the crystal. In the directional solidification process, the solid-liquid interface of the crystal plays a decisive role in the quality of the cr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B28/06
CPCC30B29/06C30B28/06
Inventor 杨晓琴陈园张宇王鹏柳杉殷建安梅超张伟
Owner JIANGXI UNIEX NEW ENERGY CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com