Carbonized silicon single crystal growing device and method for producing carbonized silicon single crystal

Abstract

The invention relates to the field of crystal growing of semiconductor materials, and specifically relates to a carbonized silicon single crystal growing device. The device comprises a crucible, a base, an overturning plate and a first driving mechanism, wherein an opening is formed in the top of the crucible, and the crucible is used for storing carbonized silicon raw materials; the surface of one side of the base is a single-crystal growing surface; the overturning plate and the base are arranged at the opening in the top of the crucible; the first driving mechanism is capable of driving thesingle-crystal growing surface of the base through the overturning plate to switch between the state of facing the inside of the crucible and the state of departing from the inside of the crucible. According to the method in the embodiment, a material supplying mechanism is arranged; non-stoichiometric ratio type carbonized silicon rich in carbon is adjusted into non-stoichiometric ratio type carbonized silicon rich in silicon. In addition, the overturning plate is arranged; seed crystals are driven by the overturning plate to depart from the raw materials of the carbonized silicon, so that the problem that the unbalanced carbonized silicon source sublimated to the surface of the seed crystal to cause low crystal quality is avoided. Therefore, the problem that the carbonized silicon changes from rich silicon state to rich carbon state, resulting in reduction of the crystal quality is solved; the crystal growing length is increased; the crystal growing benefit is increased; the carbonized silicon single crystal quality is improved.

Description

technical field [0001] The invention relates to the field of crystal growth of semiconductor materials, in particular to a silicon carbide single crystal growth device and a method for manufacturing a silicon carbide single crystal. Background technique [0002] Silicon carbide, the third-generation semiconductor, is a single crystal grown at high temperature, its hardness is second only to diamond, and its melting point is 2830°C. Difficult growth conditions, resulting in expensive silicon carbide crystal cost. Silicon carbide substrates made of silicon carbide crystals are widely used in electronic power devices and nitride epitaxial growth, and can be widely used in electric vehicles, hybrid vehicles, rail transit, high-frequency devices, microwave devices, etc., with very high economic benefits and national defense value. [0003] It is known from the silicon-carbon binary phase diagram that silicon carbide growth crystals cannot be directly solidified from a single liq...

AI Technical Summary

Problems solved by technology

For this reason, the present invention proposes a silicon carbide single crystal growth device and a method for manufacturing a silicon carbide single crystal, which solves the problem of the crystal quality decline caused by the change of silicon carbide from silicon-rich to carbon-rich, increases the crystal growth length, and improves the crystal growth rate. benefit, so as to obtain high-quality silicon carbide single crystal

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