Manufacturing method of semiconductor memory device
A storage device and manufacturing method technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as complex process flow, high production cost of semiconductor storage devices, cumbersome steps, etc., to achieve optimized process, production The effect of simplifying the method and reducing the production cost
Active Publication Date: 2020-11-03
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF3 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, in the process of forming the bit line of the semiconductor memory device, it is necessary to repeat the photolithography and etching process many times, resulting in cumbersome steps and complicated process flow, which makes the production cost of the semiconductor memory device high.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0032] see Figure 1 to Figure 15 , showing a structural diagram corresponding to each step in a manufacturing method of a semiconductor storage device. The manufacturing method of the semiconductor storage device is as follows: a substrate 10 is provided, and the substrate 10 can be but not limited to a silicon substrate, a silicon germanium semiconductor substrate , a silicon carbide substrate or a silicon-covered insulating substrate, etc., in which a storage region 100 and a peripheral circuit region 101 are arranged, as in the storage region 100, a storage unit (gate structure, source structure and drain structure, etc., the schematic diagram is omitted in the figure), and the peripheral circuit area 101 is also provided with a corresponding structure (such as an isolation structure, etc., the schematic diagram is omitted in the figure), such as figure 1 As shown, the manufacturing process of arranging the storage region 100 and the peripheral circuit region 101 in the su...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a manufacturing method of a semiconductor storage device. By forming a first pattern on a dielectric layer, the first pattern coincides with the projection of the first through hole in the thickness direction of the substrate; on the second dielectric layer Form a second pattern on the substrate, the second pattern exposes part of the second dielectric layer on the peripheral circuit area, and the second pattern is offset from the projection of the second through hole in the thickness direction of the substrate; then, the second dielectric layer is etched layer, retaining the sidewall of the first pattern and the second dielectric layer below the second pattern; then, removing the first pattern; finally, etching the dielectric layer until the first dielectric layer is exposed, forming a dielectric layer in the dielectric layer The first opening and the second opening define the position of the bit line, the first opening exposes the first through hole, and the second opening exposes the second through hole. The invention optimizes the flow of the entire manufacturing method of the semiconductor storage device by adjusting the sequence of the etching process, thereby simplifying the manufacturing method of the semiconductor storage device and reducing production costs.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a semiconductor storage device. Background technique [0002] With the continuous shrinking of the feature size of semiconductor integrated circuits, the line width required by photolithography technology is also getting smaller and smaller, and the distance between semiconductor elements is also getting shorter and shorter. Currently, a double patterning technology (Double Patterning Technology, DPT) is used to fabricate structures such as active regions or bit lines of semiconductor memory devices. However, in the process of forming the bit line of the semiconductor memory device, repeated photolithography and etching processes are required, resulting in cumbersome steps and complicated process flow, which makes the production cost of the semiconductor memory device high. [0003] Therefore, it is necessary to provide a simpler method for m...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L27/105H01L21/8239H10B99/00
CPCH01L21/76816H10B99/00
Inventor 张永兴李晓波杨海玩
Owner SEMICON MFG INT (SHANGHAI) CORP