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A quantum dot light emitting diode based on room temperature perovskite material and a preparation method thereof

A quantum dot light-emitting, perovskite material technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of complex preparation process, high color purity, size dependence, etc., to achieve simple preparation process, luminescence Improvement of efficiency and improvement of luminous performance

Active Publication Date: 2018-12-14
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The traditional thermal injection quantum dot synthesis method usually requires high temperature and inert gas protection, the preparation process is relatively complicated, and the cost is high, but the perovskite quantum dots prepared at room temperature and without inert gas protection also have such unique optical properties. , such as size-dependent luminescence, high color purity, high quantum yield, etc. At the same time, room temperature perovskite is also very easy to prepare on a large scale, making it have great potential application value in the field of optoelectronics

Method used

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  • A quantum dot light emitting diode based on room temperature perovskite material and a preparation method thereof
  • A quantum dot light emitting diode based on room temperature perovskite material and a preparation method thereof
  • A quantum dot light emitting diode based on room temperature perovskite material and a preparation method thereof

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preparation example Construction

[0037] The invention also discloses a method for preparing a quantum dot light-emitting diode based on a room temperature perovskite material, comprising the following steps:

[0038] 1. Spin-coat and deposit (DEDOT:PSS) solution on the surface of ITO glass and perform heat treatment to obtain a hole injection layer; in step 1, the concentration of (DEDOT:PSS) solution is 1.3-1.7wt%, and the heat treatment temperature is 90-150°C , the processing time is 10-30 minutes;

[0039] 2. Deposit one or more mixtures of PTAA, Poly-TPD, TFB, PVK, NPB, TCTA, TAPC and CBP on the surface of the hole injection layer obtained in step 1 and heat treat to obtain the hole transport layer; step The temperature of the second heat treatment is 50-80°C, and the treatment time is 5-15 minutes;

[0040] 3. Spin-coat APbX on the surface of the hole transport layer obtained in step 2 3 Quantum dot dispersion and heat treatment to obtain perovskite quantum dot light-emitting layer, wherein, A is one ...

Embodiment 1

[0046] The preparation method of the quantum dot light-emitting diode based on the room temperature perovskite material described in this embodiment specifically includes the following steps:

[0047] Step 1, spin-coat PEDOT:PSS solution on the cleaned ITO glass at a speed of 3000r / min, and anneal at 140°C for 15min;

[0048] Step 2, spin-coat PTAA solution at a speed of 3000r / min, and anneal at 120°C for 20min;

[0049] Step 3, Spin-coat CsPbBr prepared at room temperature 3 Quantum dot dispersion, rotating speed is 2000r / min, annealing at 60°C for 10min; CsPbBr 3 The quantum dot dispersion is prepared at room temperature;

[0050] Step 4, depositing BCPO by thermal evaporation, the deposition thickness is 10nm;

[0051] Step 5, depositing TPBi by thermal evaporation method, the deposition thickness is 40nm;

[0052] Step 6, depositing Liq / Al electrodes with a mask plate by thermal evaporation method, with a thickness of 2 / 100nm, to obtain room temperature CsPbBr 3 Perov...

Embodiment 2

[0056] Similar to Example 1, the difference is that the PTAA in step 2 of Example 1 is changed to any one of Poly-TPD, TFB and PVK, and other conditions are kept the same to obtain CsPbBr 3 Perovskite quantum dot light-emitting diodes.

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Abstract

The invention discloses a quantum dot light emitting diode based on room temperature perovskite material, the quantum dot light emitting diode comprises an ITO anode in this order from one side to theother side, A hole injection layer, a hole transport layer, a perovskite quantum dot luminescent layer, an electron transport layer and a cathode, and further comprising an interface layer arranged between the perovskite quantum dot luminescent layer and the electron transport layer, wherein the interface layer is a BCPO layer or a DPEPO layer. The interface layer effectively balances the injection of electrons and holes, which improves the luminescence performance of perovskite quantum dot light emitting diodes.

Description

technical field [0001] The invention relates to a quantum dot light-emitting diode based on a room temperature perovskite material and a preparation method thereof. Background technique [0002] Metal halide perovskite light-emitting materials have attracted much attention in the fields of solar cells, photodetectors, light-emitting diodes, and lasers due to their excellent photoelectric properties. The traditional thermal injection quantum dot synthesis method usually requires high temperature and inert gas protection, the preparation process is relatively complicated, and the cost is high, but the perovskite quantum dots prepared at room temperature and without inert gas protection also have such unique optical properties. , such as size-dependent luminescence, high color purity, high quantum yield, etc., and room temperature perovskite is also very easy to prepare on a large scale, making it have great potential application value in the field of optoelectronics. At prese...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K50/166H10K71/00
Inventor 宋继中张枫娟许蕾梦方涛曾海波
Owner NANJING UNIV OF SCI & TECH
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