Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of out-of-plane anisotropic garnet single crystal film and its preparation method

A single crystal thin film, anisotropic technology, applied in the field of out-of-plane anisotropic garnet thin film and its liquid phase epitaxy preparation field, can solve the problem of difficult to prepare garnet thin film and the like, achieve good lattice constant and good matching Effect

Active Publication Date: 2021-03-30
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It has been confirmed that only in thin garnet films, it is the spin-related spin-orbit torque that dominates the magnetic switching characteristics of the film; but as the film thickness decreases, the easy magnetization axis of the film gradually tends to the in-plane , so it is difficult to prepare out-of-plane anisotropic garnet films

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of out-of-plane anisotropic garnet single crystal film and its preparation method
  • A kind of out-of-plane anisotropic garnet single crystal film and its preparation method
  • A kind of out-of-plane anisotropic garnet single crystal film and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0023] Method for preparing an anisotropic garnet single crystal film, including the following steps:

[0024] Step 1, the prime material weigh: in y 2 O 3 , Lu 2 O 3 , Fe 2 O 3 GEO 2 , Cao, Pbo, BI 2 O 3 MOO 3 For the raw material, accurately weigh the above raw materials, where Y 2 O 3 , Lu 2 O 3 , Fe 2 O 3 GEO 2 , Cao, Pbo, BI 2 O 3 MOO 3The mass ratio is (0.07 ~ 0.15): (0.10 ~ 0.15): (5 ~ 7): (0.7 ~ 1): (0.1 ~ 0.15): (70 ~ 76): (10 ~ 15): (4 ~ 7) );

[0025] Step 2, the preparation of the melt: Put the raw material tiered in step 1 in the crucible, the layered sequence specifically: the first layer is a third of the PBO, the second layer is one-half of Fe 2 O 3 , 3rd floor is Y 2 O 3 , Lu 2 O 3 GEO 2 MOO 3 And one-half of the Fe 2 O 3 Mixed powder, 4th floor is one-half bi 2 O 3 The 5th floor is CAO, the 6th floor is one-half of the BI 2 O 3 The seventh layer is one-third of PBO; then heat insulation at 1000 to 1100 ° C, and after cooling to 200 ° C, the remaining one-third of...

Embodiment 1

[0029] Method for preparing an anisotropic garnet single crystal film, including the following steps:

[0030] Step 1, the prime material weigh: in y 2 O 3 , Lu 2 O 3 , Fe 2 O 3 GEO 2 , Cao, Pbo, BI 2 O 3 MOO 3 For the raw material, accurately weigh the above raw materials, where Y 2 O 3 , Lu 2 O 3 , Fe 2 O 3 GEO 2 , Cao, Pbo, BI 2 O 3 MOO 3 The mass ratio is 0.09: 0.14: 5.29: 0.85: 0.12: 75.63: 11.77: 6.11;

[0031] Step 2, the preparation of the melt: Put the raw material tiered in step 1 in the crucible, the layered sequence specifically: the first layer is a third of the PBO, the second layer is one-half of Fe 2 O 3 , 3rd floor is Y 2 O 3 , Lu 2 O 3 GEO 2 MOO 3 And one-half of the Fe 2 O 3 Mixed powder, 4th floor is one-half bi 2 O 3 The 5th floor is CAO, the 6th floor is one-half of the BI 2 O 3 The seventh layer is a third of the PBO; then heat insulation at 1050 ° C for 2 h, and after cooling to 200 ° C, the remaining one-third of the PBO is added to the crucible, and 2 h i...

Embodiment 2

[0036] Method for preparing an anisotropic garnet single crystal film, including the following steps:

[0037] Step 1, the prime material weigh: in y 2 O 3 , Lu 2 O 3 , Fe 2 O 3 GEO 2 , Cao, Pbo, BI 2 O 3 MOO 3 For the raw material, accurately weigh the above raw materials, where Y 2 O 3 , Lu 2 O 3 , Fe 2 O 3 GEO 2 , Cao, Pbo, BI 2 O 3 MOO 3 The mass ratio is 0.08: 0.14: 6.19: 0.87: 0.14: 73.15: 14.30: 5.13;

[0038] Step 2, the preparation of the melt: Put the raw material tiered in step 1 in the crucible, the layered sequence specifically: the first layer is a third of the PBO, the second layer is one-half of Fe 2 O 3 , 3rd floor is Y 2 O 3 , Lu 2 O 3 GEO 2 MOO 3 And one-half of the Fe 2 O 3 Mixed powder, 4th floor is one-half bi 2 O 3 The 5th floor is CAO, the 6th floor is one-half of the BI 2 O 3 The seventh layer is a third of the PBO; then heat insulation at 1050 ° C for 2 h, and after cooling to 200 ° C, the remaining one-third of the PBO is added to the crucible, and 2 h i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

An out-of-plane anisotropic garnet single crystal film and a preparation method thereof belong to the technical field of electronic materials. The composition of the single crystal thin film is Y 3‑(a+b+c) Bi a Lu b Ca c Fe 5‑d Ge d O 12 , wherein 0<a<0.5, 0<b<1.0, 0<c<1.0, 0<d<1.0, and c=d. The present invention uses Y 2 O 3 、Lu 2 O 3 , Fe 2 O 3 , GeO 2 , CaO, PbO, Bi 2 O 3 、MoO 3 As a raw material, an out-of-plane anisotropic garnet single crystal film with a minimum thickness of 170nm was obtained on a gadolinium gallium garnet substrate by layering the raw material; and the growth rate and growth temperature of the obtained film were nonlinear relationship, exhibiting out-of-plane anisotropy, which can be applied in spin logic devices.

Description

Technical field [0001] The present invention belongs to the technical field of electronic material, and more particularly to a variety of elementally doped outstositive garnet films and liquid phase preparation methods thereof. Background technique [0002] As the size of the electronic device is reduced, the influence of quantum effects is more obvious, and the research workers introduce another property-spin into the electronic device, using spin to achieve precise regulation of electron transport. Alternatively, the carrier directly stored and transmitted as an electronic spin, not only makes the device size further reduced, but also further reduces power consumption. As a magnetic insulator, a low damping, a low-damping, a ferromagnetic resonance line is small, and the self-rotation transmission distance is long, such that it is widely used in spin logic devices. [0003] The current spin effects are discovered, such as self-hectol effect, reverse from the Zehol effect, self-...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/28C30B29/64C30B19/12
CPCC30B19/12C30B29/28C30B29/64
Inventor 杨青慧吴玉娟张怀武张元婧李苏凡饶毅恒文岐业
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com