Apparatus and method for measuring phase transition temperature of thin film materials

Abstract

The invention relates to a device for measuring the phase transition temperature of a thin film material, comprising a substrate, an electrode, an infrared temperature detector, a laser light source, a Doppler detector, and a femtosecond pulsed laser light source; the substrate is used for laying a thin film to be measured , the electrode is placed on the film to be tested, and the infrared temperature detector monitors the temperature of the film to be tested; the laser light source obliquely shoots the probe light to the surface of the film to be tested, and the femtosecond pulse laser light source shoots the femtosecond laser pulse vertically to the same incident point, so that the Acoustic waves are generated in the film, so that the reflected light of the probe light on the surface of the film to be tested causes a Doppler frequency shift, and the Doppler detector is used to detect the Doppler frequency shift signal of the reflected light. The measurement device and method of the present invention utilizes femtosecond laser to induce the thin film to generate sound waves, utilizes the difference in refractive index between the crystalline state and the amorphous state of the thin film, and responds to the time difference when the sound wave travels back and forth in a thin film with a certain thickness, and passes through the Doppler detector Detects the Doppler shifted signal of reflected light, which has the advantage of fast and non-destructive measurement.

Description

technical field [0001] The invention relates to the technical field of thin film thermal performance detection, in particular to a measuring device and method for detecting the phase transition temperature of thin film phase change materials. Background technique [0002] In recent years, non-volatile memory (NVM) technology has made some significant progress in many aspects, which has brought new opportunities for the improvement of storage energy efficiency in computer systems. Researchers have suggested that new NVM technology should be used to replace traditional storage technology to meet the demand for high storage energy efficiency in the development of computer technology. A variety of new NVM technologies represented by phase-change memory have attracted extensive attention from researchers at home and abroad because of their high integration and low power consumption. Phase-change memory stores data by using the difference in conductivity of phase-change materials...

AI Technical Summary

Problems solved by technology

[0003] At present, the commonly used methods for measuring the phase transition temperature of materials are mainly differential thermal analysis (DSC) and variable temperature X-ray diffraction. The former needs to scrape the film sample into powder, which is a destructive measurement, and has certain requirements for the thickness of the film. Thin films cannot be measured; the latter has limited measurement accuracy, and the measurement error of high-temperature thin films is relatively large, and continuous and transient measurements cannot be performed

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