A GaN-based insulated gate bipolar transistor and a processing method thereof

Abstract

The invention discloses a GaN-based insulated gate bipolar transistor and a processing method thereof. The chip structure thereof comprises a substrate, a GaN or AlN buffer layer, a mask layer, a GaNpillar layer, a GaN collector region, an N-type Al<x>Ga<1-x>N buffer layer, GaN drift region and MOS structure region. The mask layer can trigger the epitaxial growth mode of GaN to change from two-dimensional planar growth to columnar growth, which is helpful to eliminate the stress caused by the mismatch between GaN and substrate and improve the crystal quality of GaN epitaxial layer. It can also realize the stripping process from the GaN columnar layer, which greatly reduces the fragmentation probability and greatly improves the yield of the device. The N-type Al<x>Ga<1-x>N buffer layer isintroduced, which effectively eliminates trailing currents during device turn-off and improves device performance with relatively small thickness. The processing method is of great significance to preparing GaN-based insulated gate bipolar transistors with high yield, low cost and low turn-off power dissipation.

Description

technical field [0001] The invention relates to a power semiconductor electronic device and a processing method thereof, in particular to a GaN-based insulating gate bipolar transistor and a processing method thereof. Background technique [0002] Compared with Si, GaAs and other materials of the first and second-generation semiconductors, the third-generation semiconductor materials represented by GaN have larger forbidden band width, higher breakdown voltage and good radiation resistance and high temperature resistance. , so it is one of the most potential materials used in the fields of high voltage, high frequency, high temperature and high power devices. [0003] At present, GaN-based insulated gate bipolar transistors are mostly prepared based on GaN substrates. However, due to the characteristics of its device structure, after completing part of the device process, the substrate with a thickness of hundreds of microns needs to be thinned to about 100 microns or even ...

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Problems solved by technology

However, the above-mentioned structures will increase the difficulty and cost of the device manufacturing process, so it is not the best way to solve the problem.

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