Method for manufacturing InP monolithic microwave integrated circuit
A microwave integrated circuit and indium phosphide single-chip technology, which is applied in the field of indium phosphide materials, can solve problems such as fragmentation and damage in the production process, and achieve the effects of improving the processing yield, no surface scratches, and avoiding corrosion defects
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[0038] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the following further describes the present invention in detail in conjunction with specific embodiments and with reference to the accompanying drawings.
[0039] Such as figure 1 As shown, figure 1 It is a flow chart of a method for making InP MMIC according to an embodiment of the present invention, including the following steps:
[0040] Step 1: Fabricate an MMIC circuit on the epitaxial layer on the front of the InP substrate, including: front die unit structure, wiring, air bridge structure, capacitor, resistance matching network, etc.
[0041] Step 2: Coating a photoresist layer on the epitaxial layer on the front surface of the InP substrate and the MMIC circuit to protect the MMIC circuit to form an InP substrate.
[0042] Step 3: Use paraffin waxes with different melting points and different flexibility to bond the InP substrate, the sapphire double-sided polishing she...
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