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A preparation method of a MOSFET power device

A power device and device technology, applied in the field of MOSFET power device preparation, can solve the problems of single-particle burnout and the inability to meet the high reliability requirements of circuits, and achieve the effects of reducing single-particle burnout, improving reliability, and increasing the number of defects

Active Publication Date: 2018-12-18
58TH RES INST OF CETC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing a MOSFET power device, so as to solve the problem that the existing MOSFET power device is prone to single-event burnout in a radiation environment and cannot meet the high reliability requirements of circuit applications

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  • A preparation method of a MOSFET power device
  • A preparation method of a MOSFET power device
  • A preparation method of a MOSFET power device

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Embodiment 1

[0031] The present invention provides a kind of preparation method of MOSFET power device, and its flow diagram is as follows figure 1 shown. The preparation method of described MOSFET power device comprises the steps:

[0032] Step S11, injecting photolithography into the sensitive area of ​​the device to form the pattern of the RH mask;

[0033] Step S12, implanting inactive impurity ions according to the pattern of the RH mask.

[0034] Specifically, first as figure 2 As shown, a silicon substrate 1 is provided, and the resistivity of the silicon substrate 1 is 0.002~0.004Ω·cm; and an epitaxial silicon layer 2 is grown on the silicon substrate 1, and the resistance of the epitaxial silicon layer 2 is The ratio is 3~24Ω·cm, and the thickness is 3um~50um; then, according to the pattern 3 of the P well mask, form the required P well pattern, such as image 3 Shown; inject P-type impurities according to the pattern 3 of the P-well mask, and the dose is 5E12~5E13cm -2 , th...

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Abstract

The invention provides a preparation method of a MOSFET power device, belonging to the technical field of integrated circuits. The sensitive region of the device is injected with photolithography to form the pattern of an RH mask. Inactive impurity ions are injected according to the pattern of the RH mask. The number of defects in an epitaxial silicon layer is increased in the sensitive region ofthe MOSFET power device, and the single event burnout under a single event irradiation condition and the working voltage drift under a total dose irradiation condition are reduced, so the reliabilityof the power MOSFET is improved.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a method for preparing a MOSFET power device. Background technique [0002] Under the current background of automation, intelligence, new energy, high energy efficiency and effective utilization of resources, it is clearly proposed that advanced rail transit equipment, power equipment, energy-saving and new energy vehicles, marine engineering equipment, aerospace equipment, etc. should be listed as breakthrough development. focus areas. In view of the fact that power semiconductors are inseparable from radiation-resistant high-voltage power devices in spaceborne radar, aviation measurement and control, nuclear bombs, communication satellites, and aircrafts that have the ability to resist nuclear explosion environments, ground systems, etc., and space satellite power management modules are widely used Discrete rad-hard power MOSFETs as electronic switches. [0003] T...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336H01L29/06
CPCH01L29/0684H01L29/66477H01L29/78
Inventor 徐海铭吴素贞洪根深吴建伟徐政刘国柱李燕妃
Owner 58TH RES INST OF CETC