A black edge cleaning method of aluminum nitride ceramic substrate for rail transit chip packaging

A technology of aluminum nitride ceramics and chip packaging, which is applied in the manufacture of electrical components, electrical solid devices, semiconductors/solid devices, etc., and can solve problems affecting the insulation of aluminum nitride, blackening, and decomposition of aluminum nitride into aluminum elements, etc.

Inactive Publication Date: 2018-12-21
WUXI TIANYANG ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] Aluminum nitride is widely used in high voltage and high power environments because of its good mechanical strength, insulation and excellent thermal conductivity, especially in the field of rail transit chip packaging, ceramic substrates made of aluminum nitride are widely used At present, aluminum nitride is mainly processed by laser scribing or cutting. However, the instantaneous high temperature of laser processing can easily cause part of aluminum nitride to decompose into simple aluminum, and quickly blacken, forming a circle of black film on the edge of the ceramic substrate, which is very influential. Aluminum Nitride Insulation

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  • A black edge cleaning method of aluminum nitride ceramic substrate for rail transit chip packaging

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Effect test

Embodiment 1

[0016] A method for cleaning black edges of an aluminum nitride ceramic substrate for rail transit chip packaging, comprising the following steps:

[0017] (1) Put the aluminum nitride ceramic substrate into 40°C pure water for ultrasonic washing for 3 minutes;

[0018] (2) Put the washed aluminum nitride ceramic substrate into the cleaning solution, continue ultrasonication for 1 hour, and the solution temperature is 60°C;

[0019] The formula of the cleaning solution includes 1% concentration of dilute hydrochloric acid, 5% concentration of hydrogen peroxide and cationic surfactant, wherein the ratio of hydrogen peroxide to dilute hydrochloric acid is 1:2. The pH value of the cleaning solution is 3. The cationic surfactants used in the cleaning solution are cetyltrimethylammonium sodium bromide, dimethylbenzyldodecylammonium bromide, alkylpyridinium and N,N dimethyldodecyl At least one of the base amines, preferably, the cationic surfactant is dimethyl benzyl dodecyl ammon...

Embodiment 2

[0023] A method for cleaning black edges of an aluminum nitride ceramic substrate for rail transit chip packaging, comprising the following steps:

[0024] (1) Put the aluminum nitride ceramic substrate into 55°C pure water for ultrasonic washing for 2 minutes;

[0025] (2) Put the washed aluminum nitride ceramic substrate into the cleaning solution, continue ultrasonication for 2 hours, and the solution temperature is 50°C;

[0026] The formula of the cleaning solution includes 10% concentration of dilute hydrochloric acid, 30% concentration of hydrogen peroxide and cationic surfactant, wherein the ratio of hydrogen peroxide to dilute hydrochloric acid is 1:3. The pH value of the cleaning solution is 2. The cationic surfactants used in the cleaning solution are cetyltrimethylammonium sodium bromide, dimethylbenzyldodecylammonium bromide, alkylpyridinium and N,N dimethyldodecyl At least one of the base amines, preferably, the cationic surfactant is dimethyl benzyl dodecyl am...

Embodiment 3

[0030] A method for cleaning black edges of an aluminum nitride ceramic substrate for rail transit chip packaging, comprising the following steps:

[0031] (1) Put the aluminum nitride ceramic substrate into 70°C pure water for ultrasonic washing for 1 min;

[0032] (2) Put the washed aluminum nitride ceramic substrate into the cleaning solution, continue ultrasonication for 3 hours, and the solution temperature is 40°C;

[0033] The formula of the cleaning solution includes 20% concentration of dilute hydrochloric acid, 50% concentration of hydrogen peroxide and cationic surfactant, wherein the ratio of hydrogen peroxide to dilute hydrochloric acid is 1:5. The pH value of the cleaning solution is 1. The cationic surfactants used in the cleaning solution are cetyltrimethylammonium sodium bromide, dimethylbenzyldodecylammonium bromide, alkylpyridinium and N,N dimethyldodecyl At least one of the base amines, preferably, the cationic surfactant is dimethyl benzyl dodecyl ammoni...

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Abstract

A method for clean a black edge of an aluminum nitride ceramic substrate for packaging a rail transit chip comprise placing an aluminum nitride ceramic substrate at 40 DEG C, and cleaning that aluminum nitride ceramic substrate at 40 DEG C, wherein the aluminum nitride ceramic substrate is cleaned at 40 DEG C, wherein the aluminum nitride ceramic substrate is clean at 40 DEG C, and the aluminum nitride substrate is cleaned at 40 DEG C. Ultrasonic washing in pure water at 70 DEG C for 1-3min; Put the washed aluminum nitride ceramic substrate into the cleaning solution, and continue ultrasonic 1-3h, the solution temperature is 40 DEG C-60 DEG C; placing the cleaned aluminum nitride ceramic substrate in a 5-10% sodium carbonate solution for ultrasonic risining for 1 to 3 minutes,, washing with clean water for 1-2min; The aluminum nitride ceramic substrate was placed in one or more solutions of acetone, butyl acetate and alcohol to ultrasound 10-30 min, after that ultrasound is finished, take out, and drying at low temperature of 50 DEG C. The invention can effectively clean the black edge of the aluminum nitride ceramic substrate caused by the laser, and does not damage the surface ofthe aluminum nitride ceramic substrate.

Description

technical field [0001] The invention relates to the technical field of chip packaging, in particular to a black edge cleaning method for an aluminum nitride ceramic substrate used for rail transit chip packaging. Background technique [0002] Aluminum nitride is widely used in high voltage and high power environments because of its good mechanical strength, insulation and excellent thermal conductivity, especially in the field of rail transit chip packaging, ceramic substrates made of aluminum nitride are widely used At present, aluminum nitride is mainly processed by laser scribing or cutting. However, the instantaneous high temperature of laser processing can easily cause part of aluminum nitride to decompose into simple aluminum, and quickly blacken, forming a circle of black film on the edge of the ceramic substrate, which is very influential. Insulation of aluminum nitride. Contents of the invention [0003] The object of the present invention is to provide a method ...

Claims

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Application Information

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IPC IPC(8): H01L21/48H01L23/15
CPCH01L21/4807H01L23/15
Inventor 陆聪王晓刚郑彬
Owner WUXI TIANYANG ELECTRONICS
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