Method for forming semiconductor structure, LDMOS transistor and method for forming same

Abstract

A method for forming a semiconductor structure, an LDMOS transistor, and a method for forming the LDMOS transistor are provided. The method for forming the semiconductor structure includes providing abase including a substrate and a fin on the substrate; performing an isolation injection process to form an isolation region in the fin portion. The isolation region is formed by an isolation injection process, so that the process of forming the isolation region does not require etching of the fins, the surface topography of the substrate is not changed, the influence of the formation process ofthe isolation zone on the follow-up process can be reduced, the process difficulty of the follow-up step can be reduced, and the process quality of the following step can be improved; As the semiconductor structure is used for forming the LDMOS transistor, the technical proposal of the invention is favorable for improve the process quality and improving the electrical performance of the formed LDMOS transistor.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure, an LDMOS transistor and a method for forming the same. Background technique [0002] A lateral diffusion field effect (Lateral Diffusion MOS, LDMOS) transistor is a semiconductor structure that forms a lateral current path on the surface of a semiconductor substrate through planar diffusion. Compared with traditional MOS transistors, LDMOS transistors have a lightly doped region between the source region and the drain region, which is called a drift region. Therefore, when the LDMOS transistor is connected to a high voltage between the source region and the drain region, the drift region can withstand a higher voltage drop, so the LDMOS transistor can have a higher breakdown voltage. [0003] The LDMOS transistor includes a source region within a semiconductor substrate, a drain region, and a channel region between the so...

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Problems solved by technology

[0005] However, after the introduction of the fin field effect transistor structure, the electrical performance of the LDMOS transistor formed by the prior art still needs to be improved.

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