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A heterojunction freewheel diode integrated silicon carbide groove gate MOSFET

A heterojunction and diode technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low integration and large cell area, reduce area, reduce conduction loss, improve integration and channel The effect of density

Active Publication Date: 2018-12-28
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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Problems solved by technology

[0003] The object of the present invention is to provide an integrated heterojunction freewheeling diode silicon carbide trench gate MOSFET for the shortcomings of large cell area and low integration degree of the existing silicon carbide trench gate MOSFET integrated with freewheeling diodes. Trench gate MOSFET has a high integration level, while integrating heterojunction diodes, the area of ​​a single cell is further reduced, which greatly improves the integration level and channel density

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  • A heterojunction freewheel diode integrated silicon carbide groove gate MOSFET
  • A heterojunction freewheel diode integrated silicon carbide groove gate MOSFET

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Embodiment Construction

[0018] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0019] This embodiment provides an integrated heterojunction freewheeling diode silicon carbide trench gate MOSFET, the cell structure of which is as follows figure 2 shown, including:

[0020] N + Type substrate 8 (N-type heavily doped SiC region),

[0021] located in N + The drain electrode 10 (MOSFET drain) under the type substrate,

[0022] located in N + N on type substrate - Type drift region 1 (N-type lightly doped SiC region),

[0023] N - The P-type base region 2 (P-type doped SiC region) on the left and right sides of the drift region, the gate electrode 4 (polysilicon region) arranged between the P-type base region, the gate electrode and the P-type base region and the gate electrode with N - The gate oxide layer 5 provided between the type drift regions,

[0024] N located in the P-type base region 2 + Source region 3 (...

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Abstract

The invention relates to the field of power semiconductors, and provides a heterojunction freewheel diode integrated silicon carbide groove gate MOSFET, which is used for overcoming the disadvantagesof large cell area and low integration degree of the existing silicon carbide groove gate MOSFET with an integrated freewheel diode. A P + type electric field shield region is arranged directly underthe anode region of the heterojunction diode in the cell structure of the silicon carbide trench gate MOSFET provided by the invention, the electric field shielding effect required by the heterojunction diode is realized while the heterojunction diode is integrated; in the anode region of the heterojunction diode, polysilicon with different doping types and concentrations can be used to adjust theon-voltage drop of heterojunction diodes. The invention not only integrates the freewheeling diode on the silicon carbide trench gate MOSFET, but also has the advantages of low conduction loss and low switching loss, high integration level and low area cost.

Description

technical field [0001] The invention relates to the field of power semiconductors, and specifically provides a highly integrated silicon carbide trench gate MOSFET with low conduction voltage drop and integrated unipolar heterojunction diode. Background technique [0002] Silicon carbide MOSFET is considered to have great advantages in energy saving of power components. Compared with silicon-based IGBT with the same withstand voltage, silicon carbide MOSFET has great advantages in reducing conduction loss and switching loss; however, silicon carbide MOSFET There is a large PN junction conduction voltage drop in the integrated body freewheeling diode. In order to reduce the turn-on voltage drop of the SiC body diode, the literature "W.Ni, K.Emori, T.Marui, et al. "SiC Trench MOSFET with an Integrated Low VonUnipolar Heterojunction Diode," Materials Science Forum, 2014, 778-780 :923-926." A SiC trench gate MOSFET is proposed, its structure is as follows figure 1 As shown, th...

Claims

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Application Information

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IPC IPC(8): H01L27/06H01L29/06H01L29/423H01L29/78
CPCH01L27/06H01L29/06H01L29/423H01L29/78
Inventor 易波张丙可
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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