Efficient intermediate infrared laser crystal Er, Pr: YSAG as well as preparation method thereof and method for realizing intermediate infrared laser output

An infrared laser and crystal technology, applied in the field of laser materials and solid-state lasers, can solve problems such as poor chemical stability and mechanical strength, and difficult preparation.

Active Publication Date: 2019-01-01
安徽晶宸科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The invention overcomes the problems of poor chemical stability and mechanical strength of YSAG crystals and difficult preparation, and provides a

Method used

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  • Efficient intermediate infrared laser crystal Er, Pr: YSAG as well as preparation method thereof and method for realizing intermediate infrared laser output

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Example 1: Growth of high Er-doped 3+ Ion concentrations of Er,Pr:YSAG crystals

[0023] Highly doped Er 3+ The ion concentration of Er, Pr: YSAG crystal refers to Er 3+ The doping concentration of ions is between 10-40at.%, Pr 3+ The concentration is between 0.01-2at.%. For example Er 3+ Concentration is 20at.%, Pr 3+ The concentration is 1 at.%. Polycrystalline raw materials prepared by solid-phase or liquid-phase methods.

[0024] The solid phase method is according to the following chemical reaction formula:

[0025] wxya 6 o 11 +3yEr 2 o 3 +(2.8-3x-3y)Y 2 o 3 +1.0Sc 2 o 3 +4.2Al 2 o 3 =Pr 3x Er 3y Y (2.8-3x-3y) sc 1 al 4.2 o 12 , where x=0.01-2at.%, y=10-40at.%.

[0026] The polycrystalline raw material of the crystal is obtained by a solid state reaction method.

[0027] High concentrations of Er can be grown by melt pulling method 3+ Ion-doped Er 3+ ,Pr 3+ :Y 2.8 sc 1 al 4.2 o 12 single crystal.

Embodiment 2

[0028] Example 2: An experimental device for realizing Er, Pr:YSAG crystal laser output in the 2.6-3.0 μm band.

[0029] Pumping Er with an InGaAs semiconductor laser 3+ ,Pr 3+ :Y 2.8 sc 1 al 4.2 o 12 crystal components. The experimental device is attached figure 1 . In the figure, 1 is an InGaAs semiconductor laser; 2 is a focusing lens; 3 is a dielectric mirror with total reflection in the 2.7-2.9μm band and full transmission at 960-980nm; 4 is Er 3+ ,Pr 3+ :Y 2.8 sc 1 al 4.2 o 12 Crystal element; 5 is a dielectric mirror that partially transmits the 2.7-2.9μm band and fully reflects 960-980nm; 6 is a laser energy meter. Since the wavelength near 2.7-2.9μm is in the strong absorption band of water, in the laser experimental device, it is also necessary to exclude water vapor in the resonant cavity or shorten the resonant cavity to reduce the adverse effect of water vapor on laser oscillation.

[0030] At present, InGaAs LD laser is used as the pump source to pu...

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Abstract

The invention discloses an efficient intermediate infrared laser crystal Er, Pr: YSAG as well as a preparation method thereof and a method for realizing intermediate infrared laser output. The methodtakes a scandium-contained garnet crystal material yttrium aluminium scandium garnet single crystal with high symmetry as a substrate, Er<3+> is taken as an active ion, and Pr<3+> ion is doped into the crystal, so that particle number of energy level <4>I<13/2> under laser at a wave band of 2.6-3.0 mum of Er<3+> ion is effectively evacuated, fluorescent lifetime of the energy level is shortened, alaser threshold value is reduced, laser output efficiency and laser output power are improved. A semiconductor laser unit is adopted for pumping crystal, so that laser output at a wave band of 2.6-3.0 mum is realized, and important application prospect in the fields such as laser medicine, scientific research and military science is realized. At present, an InGaAs LD laser unit is adopted as a pumping source for pumping Er, Pr:YSAG crystal, so that double-wave-length intermediate infrared laser output with wavelength being 2.694 mum and 2.825 mum is realized.

Description

technical field [0001] The invention relates to the field of laser materials and solid lasers, in particular to a high-efficiency mid-infrared laser crystal Er, Pr:YSAG and a method for preparing and realizing mid-infrared laser output. Background technique [0002] The mid-infrared laser in the 2.6-3.0μm band overlaps with the strong absorption peak of water. Because water has a particularly high absorption rate for it, when it is used to cut human tissues with high water content, the penetration depth is only about 1μm, and the thermal damage range is relatively large. Small, it is an ideal working band for fine surgery. In addition, the laser in this band can also be used as a pump source for optical parametric oscillation to achieve 3-15 μm mid- and far-infrared laser output, which has important applications in the fields of environmental pollution detection, photoelectric countermeasures, and air defense. [0003] At present, the methods to achieve 2.6-3.0μm band laser...

Claims

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Application Information

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IPC IPC(8): C30B29/28C30B28/02C30B15/36
CPCC30B15/36C30B28/02C30B29/28
Inventor 陈媛芝马孙明郭玉勇王晓梅彭方
Owner 安徽晶宸科技有限公司
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