Peak voltage lossless synchronous absorption circuit and step-up and step-down switching power supply circuits
A technology of peak voltage and absorbing circuit, applied in electrical components, adjusting electrical variables, instruments, etc., can solve problems such as common mode interference, and achieve good effect of suppressing common mode interference
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Embodiment 1
[0050] Please refer to Figure 10 , Embodiment 1 of the present invention provides a peak voltage lossless synchronous snubbing circuit, including a first diode Ds1, a third diode Ds3, a bus capacitor Cbus, a fourth diode Ds4 and a second Diode Ds2, the common intersection of the cathode of the first diode Ds1 and the anode of the third diode Ds3 is connected to the common intersection of the cathode of the fourth diode Ds4 and the anode of the second diode Ds2 There is a snubber capacitor Cs1, and the switch device is turned on or off by a pulse drive signal. That is, the peak voltage lossless synchronous absorption circuit is composed of a string composed of the first diode Ds1, the third diode Ds3, the bus capacitor Cbus, the fourth diode Ds4 and the second diode Ds2 connected in parallel at both ends of the switching device Q1. A parallel circuit is formed.
[0051] Please refer to Figure 10, the switching device Q1 can be a field effect transistor. The specific conne...
Embodiment 2
[0066] Embodiment 2 of the present invention is improved on the basis of Embodiment 1. Its area lies in that the first diode Ds1 and the second diode Ds2 in the charging circuit, and the diode Ds2 in the one-way discharging circuit At least one of the third diode Ds3 and the fourth diode Ds4 adopts a junction field effect transistor, a bipolar transistor, an insulated gate bipolar transistor, a metal oxide semiconductor field effect transistor, or a V-groove field effect transistor. Transistor replacement, when replacing at least one diode in the charging circuit, the conduction of the junction field effect transistor, bipolar transistor, insulated gate bipolar transistor, metal oxide semiconductor field effect transistor or V-groove field effect transistor The conduction direction is the same as the current direction of the charging loop; when replacing at least one diode in the unidirectional discharging loop, the junction field effect transistor, bipolar transistor, insulate...
Embodiment 3
[0072] The peak voltage lossless synchronous absorbing circuit provided by the third embodiment of the present invention is improved on the basis of the first embodiment, the difference is that the third diode Ds3 and / or the fourth diode Ds4 in the unidirectional discharge circuit Use resistors, inductors or wires instead. When all the wires of the third diode Ds3 and the fourth diode Ds4 are replaced, the discharge circuit is not unidirectional. However, the charging circuit is a symmetrical double diode structure, which has the function of suppressing common-mode interference.
[0073] Please refer to Figure 10 , Figure 22 and Figure 23 , replacing the third diode Ds3 in the unidirectional discharge circuit with the inductor L2 and the resistor R1 respectively. At this time, the inductor L2 and the resistor R1 are connected to form a current loop. In the unidirectional discharge circuit, the distribution of the positional relationship between the various components i...
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Abstract
Description
Claims
Application Information
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