Liquid crystal modulator capable of simultaneously suppressing ripple effect and stray light
A liquid crystal modulator and stray light technology, applied in optics, instruments, nonlinear optics, etc., can solve the problems of increasing system complexity and implementation difficulty, and the inability to apply large-scale commercial production, etc., so as to be suitable for large-scale promotion and suppression Ripple effect, the effect of reducing the difference in reflectance
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Embodiment 1
[0023] like figure 1 As shown, it is a liquid crystal modulation device that can simultaneously suppress the ripple effect and stray light in a preferred embodiment of the present invention, including an upper substrate 1, a common electrode layer 2, an upper alignment layer 3, a liquid crystal layer 4, and a lower alignment layer 5 , a pixel electrode layer 6, a lower substrate 7 and a pixel electrode gap filling material 8; the liquid crystal regulator is a stacked structure, and from top to bottom are the upper substrate 1, the common electrode layer 2, and the upper alignment layer 3. The liquid crystal layer 4 , the lower alignment layer 5 , the pixel electrode layer 6 and the lower substrate 7 ; the pixel electrode layer 6 is filled with the pixel electrode gap filler 8 .
[0024] The pixel electrode layer 6 is used to apply a voltage to the liquid crystal layer, and is also used to realize the modulation of light entering the liquid crystal layer,
[0025] In order to ...
Embodiment 2
[0030] This embodiment specifically describes the steps of manufacturing a liquid crystal modulation device of the present invention that can simultaneously suppress the ripple effect and stray light:
[0031] Step S1: based on the lower substrate 7 with the pixel electrode layer, plate a 75nm-thick AlN pixel electrode gap filler 8 in the gap between the pixel electrodes;
[0032] Step S2: forming an AlN film by drying or other processes;
[0033] Step S3: Spin-coat polyimide with a thickness of 50 nm on the AlN film, and perform a drying operation at 220° C. for 3 hours to form a lower alignment layer 5 ;
[0034] Step S4: Spin-coat 50nm polyimide on the upper substrate 1 made of glass, and perform a drying operation at 220° C. for 3 hours to form an upper alignment layer 3 ;
[0035] Step S5: The upper alignment layer 3 and the lower alignment layer 5 are adjacent, and the upper substrate 1 and the lower substrate 7 are connected with a frame glue, and then the frame glue i...
Embodiment 3
[0041] image 3 Shown is the relationship curve between the reflectivity of light beam energy and the type of pixel electrode gap filler 8 at different wavelengths in the C-band of another preferred embodiment of the present invention.
[0042] In this embodiment, the size of the pixel electrodes is 6.4um, and the distance between the pixel electrodes is 0.2um.
[0043] image 3Among them, the marked 0nm curve means that the pixel electrode gap filler 8 is only filled in the pixel electrode gap; the 75nm curve means that there is a 75nm thick pixel electrode gap filler 8 on the pixel electrode except for filling in the pixel electrode gap. image 3 List no addition, addition of 0nm thickness SiO 2 、Si 3 N 4 、Al 2 o 3 , AlN and SiO with a thickness of 75nm 2 、Si 3 N 4 、Al 2 o 3 The reflectivity of the beam energy under the nine structures of AlN and AlN.
[0044] from image 3 It can be seen that without adding any pixel electrode gap filler 8 , due to the existenc...
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Abstract
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