A lead-out structure of a top metal bonding pad and a method of manufacture that same

Abstract

The invention discloses an extraction structure of a top layer metal bonding pad. The top layer metal bonding pad is formed by photoetching a top layer metal layer with a TiN layer formed on the surface. The extraction structure comprises a first window and a second window, and the second window is located in the first window. A first dielectric layer is formed on the surface of the TiN layer, anda first window is formed by etching and completely removing the first dielectric layer and the TiN layer in the first window region; Forming a second dielectric layer on the surface of the first dielectric layer outside the first window and on the surface of the top metal layer at the side of the first window and the bottom of the first window, the second window being formed by etching and completely removing the second dielectric layer in the second window region; A second dielectric layer is retained between a side surface of the second window and a side surface of the first window and forms an isolation structure. The invention also discloses a manufacturing method of a lead-out structure of a top layer metal bonding pad. The invention can prevent the TiN layer from being corroded by fluorine.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a lead-out structure of a top-layer metal bonding pad. The invention also relates to a method for manufacturing the lead-out structure of the top layer metal bonding pad. Background technique [0002] Radio Frequency Transverse Double Diffusion Field Effect Transistor (RFLDMOS) has the advantages of high operating frequency, high withstand voltage, high output power, high gain, high linearity, etc., and is widely used in mobile transmission base stations, radio and television transmission base stations, etc., broadband frequency modulation transmitters , airborne transponders, radar systems, etc.; based on its application fields, the reliability requirements of the products are relatively high, among which there is a high temperature, humidity and high voltage accelerated stress test, the conditions of high temperature, humidity and high voltage such ...

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Problems solved by technology

[0003] Removing the titanium nitride on the surface of the top metal layer can avoid the occurrence of electrochemical reactions, but this will cause two problems. One is that titanium nitride is an anti-reflection layer, and it will affect the lithography of the top metal layer after removal. RFLDMOS is a power device formed by parallel multi-finger gates. The device width is large, and the working current of each finger drain is large. Removing surface titanium nitride will affect the electromigration ability of the device.

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